APT50M60L2VR Advanced Power Technology, APT50M60L2VR Datasheet
APT50M60L2VR
Manufacturer Part Number
APT50M60L2VR
Description
Manufacturer
Advanced Power Technology
Datasheet
1.APT50M60L2VR.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT50M60L2VR
Manufacturer:
TI/NSC
Quantity:
20 000
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• TO-264
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
USA
EUROPE
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
DS(on)
E
D(on)
GS(th)
I
,T
I
GSS
P
DSS
GSM
T
DSS
I
DM
AR
GS
AR
D
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MAX
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
405 S.W. Columbia Street
Chemin de Magret
®
Package
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
(Repetitive and Non-Repetitive)
2
DS
(V
C
APT Website - http://www.advancedpower.com
= V
1
C
= 25°C
DS
• 100% Avalanche Tested
= 25°C
Bend, Oregon 97702 -1035
F-33700 Merignac - France
4
GS
GS
> I
2
DS
DS
, I
D(on)
= ±30V, V
GS
D
(V
= V
= 0.8 V
= 0V, I
= 5mA)
GS
x R
DSS
= 10V, 0.5 I
DS(on)
, V
DSS
D
DS
= 250µA)
GS
= 0V)
, V
®
Max, V
= 0V)
GS
= 0V, T
D[Cont.]
All Ratings: T
GS
= 10V)
)
C
= 125°C)
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
APT50M60L2VR
500V 77A 0.060
C
®
= 25°C unless otherwise specified.
MIN
500
77
2
APT50M60
-55 to 150
3200
TYP
500
308
±30
±40
825
300
5.0
77
77
50
G
TO-264
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Max
0.060
±100
MAX
250
25
4
D
S
Amps
Watts
Amps
Amps
Ohms
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
W
Related parts for APT50M60L2VR
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
APT50M60L2VR Summary of contents
Page 1
... T DS DSS ±30V 0V 5mA APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France APT50M60L2VR 500V 77A 0.060 TO-264 Max ® 25°C unless otherwise specified. C APT50M60 500 77 308 ±30 ±40 825 5.0 -55 to 150 300 ...
Page 2
... BSC 2-Plcs. Dimensions in Millimeters and (Inches) 5,045,903 5,089,434 5,182,234 5,256,583 4,748,103 5,283,202 5,231,474 APT50M60L2VR MIN TYP MAX 12000 1600 610 500 80 DSS @ 25°C 210 20 25 DSS 80 8 MIN TYP MAX ...