APT40M70JVFR Advanced Power Technology, APT40M70JVFR Datasheet
APT40M70JVFR
Manufacturer Part Number
APT40M70JVFR
Description
Manufacturer
Advanced Power Technology
Datasheet
1.APT40M70JVFR.pdf
(4 pages)
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
•
• Faster Switching
• Lower Leakage
Symbol
Symbol
T
R
V
T-MAX™
BV
V
V
J
I
I
V
I
E
E
D(on)
DS(on)
GS(th)
,T
I
GSS
P
I
DSS
GSM
DM
T
DSS
AR
I
GS
AR
D
AS
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
POWER MOS V
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
or TO-264 Package
®
is a new generation of high voltage N-Channel enhancement
1
1
(Repetitive and Non-Repetitive)
2
(V
DS
C
DS
APT Website - http://www.advancedpower.com
= V
= 25°C
C
1
> I
= 25°C
• Avalanche Energy Rated
•
4
GS
GS
D(on)
FAST RECOVERY BODY DIODE
2
DS
DS
, I
= ±30V, V
GS
D
®
= V
= 0.8 V
(V
x R
= 2.5mA)
= 0V, I
GS
DSS
DS(on)
FREDFET
= 10V, 0.5 I
APT40M70B2VFR
APT40M70B2VFRG* APT40M70LVFRG*
, V
DSS
DS
D
GS
= 250µA)
Max, V
, V
= 0V)
= 0V)
GS
= 0V, T
GS
D[Cont.]
All Ratings: T
= 10V)
*
G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
)
= 125°C)
400V
C
®
= 25°C unless otherwise specified.
57A
B2VFR
APT40M70B2_LVFR(G)
MIN
400
57
2
APT40M70LVFR
T-MAX™
-55 to 150
0.070Ω Ω Ω Ω Ω
2500
4.16
TYP
±30
±40
400
228
520
300
57
57
50
0.070
1000
±100
MAX
250
4
TO-264
G
LVFR
Amps
Amps
Amps
Ohms
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S
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APT40M70JVFR Summary of contents
Page 1
POWER MOS V Power MOS new generation of high voltage N-Channel enhancement ® mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
V GS =6V, 7V, 10V & 15V 100 150 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 -55° ...
Page 4
OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE . DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 ...