MG400Q2YS60A MITSUBISHI, MG400Q2YS60A Datasheet
MG400Q2YS60A
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MG400Q2YS60A Summary of contents
Page 1
... The electrodes are isolated from case. • Low thermal resistance. • 2.4 V (typ.) CE (sat) Equivalent Circuit Ｃ Signal terminal (H) O MITSUBISHI IGBT Module E1/ ( (H) 8. Open MG400Q2YS60A 2004-10-01 1/8 ...
Page 2
... Package Dimensions (H) Signal Terminal Layout 2.54 Weight: 375 ( ( ( (H) 8. Open ( ( ( ( ( (H) 8. Open MG400Q2YS60A 2004-10-01 2/8 ...
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... Symbol Test Condition = ⎯ 600 ± (Fo MG400Q2YS60A Unit °C °C °C V N･m Min Typ. Max Unit ⎯ ⎯ +3/−4 mA ⎯ ⎯ 100 nA ⎯ ...
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... Symbol Test Condition Inverter IGBT stage R th (j-c) Inverter FRD stage R With silicon compound th (c- 90 90% 10 (off) f MG400Q2YS60A Min Typ. Max Unit ⎯ ⎯ 0.033 °C/W ⎯ ⎯ 0.068 ⎯ ⎯ 0.013 °C/W 2004-10-01 4/8 ...
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... V V Min CE (sat 2 2 2.5 may not be output even under error conditions. O Min Typ. Max Unit ⎯ V 600 750 14 ⎯ ⎯ Ω R 5.1 G ⎯ ⎯ kHz Max 2.4 2.6 2.8 MG400Q2YS60A and VF among IGBT in CE (sat) 2004-10-01 5/8 ...
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... Gate-emitter voltage V I – 800 Common emitter 600 400 25°C 200 125° Gate-emitter voltage V MG400Q2YS60A ( 800 A 400 A 200 ( −40°C ...
Page 7
... Gate resistance off 100 E off Common emitter 600 5.1 Ω ± 400 0 100 200 Collector current I MG400Q2YS60A – 2000 3000 (nC) G – (Ω) G – 25° 125°C ...
Page 8
... Tc = 25°C Curves must be derated linearly with increase in temperature. 1 100 1 10 100 Collector-emitter voltage V R – 25°C 0.1 0.01 0.001 0.001 0.01 0.1 Pulse width t MG400Q2YS60A – 300 400 ( µs∗ 1000 10000 ( Diode stage Transistor stage 1 10 (s) w 2004-10-01 8/8 ...