SQD300AA120 Sanrex Corp., SQD300AA120 Datasheet

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SQD300AA120

Manufacturer Part Number
SQD300AA120
Description
Manufacturer
Sanrex Corp.
Datasheet

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SanRex
SQD300AA120 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
■Maximum Ratings
■Electrical Characteristics
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
Rth ( j-c)
(Applications)
V
Symbol
Symbol
V
V
I
Low saturation voltage for higher efficiency.
High DC current gain h
Isolated mounting base
Moter Control(VVVF) , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
CEX (SUS)
C
V
V
V
V
Tstg
CE (sat)
BE (sat)
−I
V
I
I
h
ton
CBO
=300A, V
EBO
P
CBO
CEX
EBO
I
I
T
ts
ECO
tf
ISO
TRANSISTOR MODULE
SQD300AA120
C
B
FE
T
j
C
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching
Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
CEX
®
=1200V
Item
Item
FE
On Time
Storage Time
Fall Time
Terminal (M6)
Terminal (M4)
(M6)
V
T
A.C.1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.0-1.4(10-14)
Typical Value
V
V
Ic=60A,I
Ic=300A,V
Ic=300A,I
Ic=300A,I
Vcc=600V,Ic=300A
I
Ic=−300A
Transistor part
Dioe part
B1
C
BE
CB
EB
=25℃
=6A,I
=−2V
=10V
=1200V
B2
B2
B
B
=−6A
=−12A
CE
=6A
=6A
EX
=5V
BX
Conditions
Conditions
B
E
C
(Tj=25℃ unless otherwise specified)
×7.5
2-M4
EX
1200
Min.
11.013.0
SQD300AA120
2-M6
×13
−40 to +150
−40 to +125
BX
75
4.7(48)
4.7(48)
1.5(15)
B
Ratings
Ratings
21.0
1200
1200
2000
2500
108max
93±0.5
300
300
470
10
16
E
29.0
Max.
1200
15.0
4.0
3.0
3.5
3.0
3.0
1.8
0.063
0.3
UL;E76102 ( M)
C
Unit:A
(㎏f・B)
℃/W
N・m
4- φ6.5
Unit
Unit
mA
mA
μs
W
A
A
A
V
V
V
V
g
V
V
V
V

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SQD300AA120 Summary of contents

Page 1

... TRANSISTOR MODULE SQD300AA120 SQD300AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. =300A, V =1200V ● ...

Page 2

... Typical I =6A B1 5 I =− =600V CC Tj=25℃ 2 0 0 2 5 0 3 0 0 SQD300AA120 V (sat) (sat) CE 0 1 2 2 5 1 0 2 5 1 0 Collector Current Ic (A) ...

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