APT60GT60JR Advanced Power Technology, APT60GT60JR Datasheet
APT60GT60JR
Manufacturer Part Number
APT60GT60JR
Description
Manufacturer
Advanced Power Technology
Datasheet
1.APT60GT60JR.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT60GT60JR
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
Part Number:
APT60GT60JRD
Manufacturer:
APT
Quantity:
25
Company:
Part Number:
APT60GT60JRD
Manufacturer:
APT
Quantity:
15 500
Company:
Part Number:
APT60GT60JRDQ2
Manufacturer:
NIEC
Quantity:
1 000
Part Number:
APT60GT60JRDQ2
Quantity:
115
Company:
Part Number:
APT60GT60JRDX
Manufacturer:
APT
Quantity:
25
USA
EUROPE
The Thunderbolt IGBT
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
V
Symbol
Symbol
T
BV
CE
GE
V
V
J
I
I
V
E
I
I
,T
I
I
CES
GES
P
CGR
T
CES
CM
LM
C1
C2
GE
AS
(ON)
CES
(TH)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
RBSOA Clamped Inductive Load Current R
Single Pule Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
405 S.W. Columbia Street
Chemin de Magret
Thunderbolt IGBT
™
is a new generation of high voltage power IGBTs.
1
(V
GE
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= 20K )
2
= V
= V
= V
• High Freq. Switching to 150KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
Bend, Oregon 97702-1035
F-33700 Merignac - France
GE
GE
C
C
C
GE
GE
CES
CES
= 25°C
= 25°C
= 95°C
= 15V, I
= 15V, I
= ±20V, V
, I
, V
, V
C
GE
GE
GE
= 500µA, T
G
C
C
= 0V, I
= 0V, T
= 0V, T
= 11 T
= I
= I
CE
C2
C2
= 0V)
, T
, T
C
™
j
j
j
= 25°C)
= 0.5mA)
= 125°C)
j
j
= 25°C)
C
= 25°C)
= 125°C)
= 25°C
All Ratings: T
Phone: (33) 5 57 92 15 15
Phone: (541) 382-8028
APT60GT60JR
C
= 25°C unless otherwise specified.
MIN
600
3
APT60GT60JR
-55 to 150
ISOTOP
600V
600
600
±20
360
360
378
300
TYP
G
2.0
93
60
65
4
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
®
2000
±100
MAX
2.5
2.8
80
"UL Recognized"
5
C
E
93A
Amps
Watts
UNIT
Volts
UNIT
Volts
m
°C
nA
A
J
Related parts for APT60GT60JR
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
APT60GT60JR Summary of contents
Page 1
... APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France APT60GT60JR 600V "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT60GT60JR 600 600 ± 360 360 65 378 -55 to 150 300 MIN TYP MAX 600 ...
Page 2
... J Inductive Switching (25°C) V (Peak) = 0.66V CLAMP CES V = 15V +25° 20V MIN ) APT60GT60JR TYP MAX UNIT 3125 3590 310 450 pF 180 310 257 410 120 180 190 ns 315 470 245 490 25 50 ...
Page 3
V =17, 15, 13, 11 & 10V GE 120 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 1, Typical Output Characteristics (T 160 250 µsec. Pulse Test V = 15V GE 120 ...
Page 4
... Figure 11, Typical Switching Energy Losses vs Gate Resistance 2.5 2.0 1.5 1.0 0.5 0 100 125 150 Figure 13, Typical Switching Energy Losses vs Collector Current 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency APT60GT60JR 100 125 150 T , CASE TEMPERATURE (° 0. CES V = +15V +25°C ...
Page 5
... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) * Emitter * Emitter Dimensions in Millimeters and (Inches) 4,895,810 5,045,903 5,089,434 5,256,583 4,748,103 5,283,202 APT60GT60JR V CHARGE *DRIVER SAME TYPE AS D.U. 0. CES = off 100uH V CLAMP ...