APT50M50JLL Advanced Power Technology, APT50M50JLL Datasheet

APT50M50JLL

Manufacturer Part Number

APT50M50JLL

Description

Manufacturer

Advanced Power Technology

Datasheet

1.APT50M50JLL.pdf (4 pages)

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Bonase Electronics (HK) Co., Limited

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Power MOS 7

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7

and Q

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

D(on)

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

. Power MOS 7

POWER MOS 7

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of low loss, high voltage, N-Channel

combines lower conduction and switching losses

(Repetitive and Non-Repetitive)

• Increased Power Dissipation

• Easier To Drive

• Popular SOT-227 Package

APT Website - http://www.advancedpower.com

= V

= 25°C

> I

= 25°C

D(on)

, I

= ±30V, V

by significantly lowering R

= 400V, V

= 500V, V

x R

= 5mA)

= 0V, I

DS(on)

MOSFET

= 10V, 44.5A)

= 250µA)

Max, V

= 0V)

= 0V, T

= 0V)

All Ratings: T

= 10V)

= 125°C)

DS(ON)

APT50M50JLL

500V 71A 0.050

= 25°C unless otherwise specified.

MIN

500

APT50M50JLL

-55 to 150

ISOTOP

3200

4.76

TYP

±30

±40

500

284

595

300

0.050

±100

MAX

100

500

"UL Recognized"

Ohms

Amps

Watts

Amps

UNIT

W/°C

UNIT

Volts

µA

°C

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APT50M50JLL Summary of contents

Page 1

... ±30V 0V 5mA APT Website - http://www.advancedpower.com APT50M50JLL 500V 71A 0.050 DS(ON) ISOTOP ® = 25°C unless otherwise specified. C APT50M50JLL 500 71 284 ±30 ±40 595 4.76 -55 to 150 300 71 50 3200 MIN TYP MAX 500 71 0.050 100 = 125°C) 500 ± ...

Page 2

... Starting T = +25° 1.27mH numbers reflect the limitations of the test circuit rather than the dt device itself. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT50M50JLL MIN TYP MAX 10549 2061 107 200 50 107 MIN TYP MAX ...

Page 3

... FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 1.3 1.2 1.1 1.0 0.9 0 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100 125 150 FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT50M50JLL 15 &10V 7.5V 7V 6. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS NORMALIZED 10V @ I = 44. =10V V GS =20V 100 120 140 160 180 ...

Page 4

... W=4.3 (.169) 8.2 (.322) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 14.9 (.587) * Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT50M50JLL C iss C oss C rss DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25°C 0.5 0.7 0.9 1.1 1.3 1.5 V ...

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