QM100DY-24 MITSUBISHI, QM100DY-24 Datasheet - Page 4

• Manufacturer Part Number: QM100DY-24
• Manufacturer: MITSUBISHI

0.20
0.16
0.12
0.08
0.04
10
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
2
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
10
0
10
1
0
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
10
–1
TRANSIENT THERMAL IMPEDANCE
0
CHARACTERISTICS (TRANSISTOR)
–3
BASE REVERSE CURRENT –I
V
I
I
T
NON–REPETITIVE
0
B1
C
CC
C
=100A
2
2
2
=25°C
=2A
SWITCHING TIME VS. BASE
=300V
2
3
3
3
T
T
4
4
4
j
j
t
t
=25°C
=125°C
f
CURRENT (TYPICAL)
3 4 5
5
5
5
s
7
7
7
10
10
10
1
–2
1
TIME (s)
7
2
2
10
3
3
4
4
0
5
5
7
7
10
2 3 4 5 7
10
100µs
–1
2
t
w
2
2
=50µs
3
3
B2
4
4
(A)
5
5
CE
7
7
10
(V)
10
10
1
3
0
200
175
150
125
100
100
10
10
10
75
50
25
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
T
COLLECTOR-EMITTER REVERSE
100
CHARACTERISTICS) (TYPICAL)
j
20
=125°C
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
0.4
COLLECTOR
DISSIPATION
200
40
HIGH POWER SWITCHING USE
300
60
0.8
–V
CEO
400
80
(V)
1.2
500
100 120
QM100DY-HK
SECOND
BREAKDOWN
AREA
600
T
T
I
–5A
C
B2
1.6
j
j
=25°C
=125°C
INSULATED TYPE
( C)
=–2A
700
140
CE
800
160
2.0
(V)
Feb.1999