APT10045JFLL Advanced Power Technology, APT10045JFLL Datasheet

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APT10045JFLL

Manufacturer Part Number
APT10045JFLL
Description
Manufacturer
Advanced Power Technology
Datasheet

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Part Number
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Part Number:
APT10045JFLL
Manufacturer:
APT
Quantity:
15 500
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
V
I
E
E
D(on)
DS(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
2
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
(V
DS
C
DS
FAST RECOVERY BODY DIODE
APT Website - http://www.advancedpower.com
= V
1
C
= 25°C
> I
= 25°C
4
GS
GS
D(on)
DS
, I
2
DS
®
= ±30V, V
GS
D
by significantly lowering R
= 800V, V
= 1000V, V
(V
R
x R
= 2.5mA)
= 0V, I
GS
DS(on)
FREDFET
= 10V, 11.5A)
D
DS
= 250µA)
Max, V
GS
= 0V)
GS
= 0V, T
= 0V)
GS
All Ratings: T
= 10V)
C
= 125°C)
1000V 21A 0.450
DS(ON)
APT10045JFLL
C
= 25°C unless otherwise specified.
1000
MIN
21
3
APT10045JFLL
-55 to 150
ISOTOP
1000
2500
3.68
TYP
±30
±40
460
300
21
84
21
50
®
0.450
1000
±100
MAX
250
5
"UL Recognized"
G
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S

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APT10045JFLL Summary of contents

Page 1

... ±30V 0V 2.5mA APT Website - http://www.advancedpower.com APT10045JFLL 1000V 21A 0.450 DS(ON) ISOTOP ® = 25°C unless otherwise specified. C APT10045JFLL 1000 21 84 ±30 ±40 460 3.68 -55 to 150 300 21 50 2500 MIN TYP MAX 1000 21 0.450 250 = 125°C) 1000 ± ...

Page 2

... Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT10045JFLL MIN TYP MAX 4350 715 120 154 639 ...

Page 3

... FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.30 1.20 1.10 1. -55°C 0.90 0. 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100 125 150 FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT10045JFLL =15 & 8V 6. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS NORMALIZED 10V @ 11. =10V V GS =20V ...

Page 4

... FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE t d(off 4000 3500 E on 3000 2500 2000 1500 1000 FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT10045JFLL C iss C oss C rss DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25° 0.3 0.5 0.7 0.9 1.1 1 ...

Page 5

... H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 14.9 (.587) * Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT10045JFLL 90% Gate Voltage t d(off) Drain Voltage 90% 10% Drain Current Switching Energy 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25 ...

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