APT10050LLC Advanced Power Technology, APT10050LLC Datasheet
APT10050LLC
Manufacturer Part Number
APT10050LLC
Description
Manufacturer
Advanced Power Technology
Datasheet
1.APT10050LLC.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT10050LLC
Manufacturer:
APT
Quantity:
15 500
USA
EUROPE
Power MOS VI
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
Lower gate charge coupled with Power MOS VI
delivers exceptionally fast switching speeds.
• Lower Gate Charge
• Faster Switching
• 100% Avalanche Tested
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
E
DS(on)
D(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
405 S.W. Columbia Street
Chemin de Magret
TM
POWER MOS VI
is a new generation of low gate charge, high voltage
1
1
(Repetitive and Non-Repetitive)
2
(V
DS
C
DS
APT Website - http://www.advancedpower.com
= V
1
C
= 25°C
> I
= 25°C
Bend, Oregon 97702 -1035
F-33700 Merignac - France
4
GS
GS
D(on)
DS
DS
2
, I
= ±30V, V
GS
D
= V
= 0.8 V
(V
x R
= 2.5mA)
• Lower Input Capacitance
• Easier To Drive
• Popular SOT-227 Package
= 0V, I
GS
DSS
DS(on)
= 10V, 0.5 I
TM
, V
DSS
DS
D
GS
optimized gate layout,
= 250µA)
Max, V
, V
= 0V)
TM
= 0V)
GS
= 0V, T
GS
D[Cont.]
All Ratings: T
= 10V)
)
C
iss
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
= 125°C)
and C
1000V
rss
C
APT10050JLC
.
= 25°C unless otherwise specified.
1000
MIN
19
3
APT10050JLC
-55 to 150
ISOTOP
19A 0.500
1000
2500
TYP
±30
±40
450
300
3.6
G
19
76
19
50
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
®
0.500
±100
MAX
250
25
5
"UL Recognized"
D
S
Amps
Watts
Amps
Amps
Ohms
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
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APT10050LLC Summary of contents
Page 1
POWER MOS VI Power MOS new generation of low gate charge, high voltage TM N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize C Lower gate charge coupled with ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...