MIG20J503H TOSHIBA Semiconductor CORPORATION, MIG20J503H Datasheet
MIG20J503H
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MIG20J503H Summary of contents
Page 1
... MIG20J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI (silicon-on-insulator) process drives these directly in response to a PWM signal. Moreover, since high-voltage level-shifter is built in ...
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... SGND Mark side IN Y SGND SGND Toshiba logo type ※ MIG20J503H JAPAN product number 2 MIG20J503H Lot No. 2004-03-16 ...
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... Driver Under Under Voltage Voltage Low Side Driver Over Over Temp Current High Side Driver Under Under Voltage Voltage Low Side Driver Over Over Temp Current 3 MIG20J503H PGND PGND PGND W ...
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... U-Phase low-side input pin (negative logic U-Phase high-side input pin (negative logic U-Phase Diagnosis output pin (open drain output. Wired or connection can be performed with the diagnosis output pin of other phase U-Phase control power supply (+15 V typ.) CC Pin Description 4 MIG20J503H 2004-03-16 ...
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... H H Detecting H L Detecting L H Detecting L L Detecting H H Detecting H L Detecting L H Detecting MIG20J503H IGBT State Fault Output High Side Low Side FO (X) Arm Arm OFF OFF OFF OFF ON OFF ON OFF OFF OFF OFF OFF OFF OFF OFF OFF ...
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... 600 V CES ± ± 5 ±5 V PGND-SGND dv/dt 20 kV/µ −20 to 100 T °C OPE T 150 °C j −40 to 125 T °C stg V 2500 (1 min) Vrms ISO ⎯ 0.5 N·m 6 MIG20J503H 2004-03-16 ...
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... inductive load dead 300 Transistor stage R th (j-c) Diode stage 7 MIG20J503H Min Typ. Max Unit 50 300 400 ⎯ ⎯ 1 ⎯ mA 0.8 1.5 ⎯ 1.1 1.5 ⎯ 330 600 µ ...
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... When the overcurrent detection value is set by an actual application necessary to consider the resistance of the internal bonding wire. The resistance of the internal bonding wire is 5.5 mΩ. Note 3: Switching waveform V-Phase PGND SGND V 19 Timing Chart MIG20J503H 2004-03-16 ...
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... Volt age age Low Side Driver Over Over Temp Current High Side Driver Under Under Volt Volt age age Low Side Driver Over Over Temp Current 9 MIG20J503H PGND High voltage + PGND ...
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... Forward voltage V High Side Arm Switching Time – Common emitter 300 L-Load Tc = 100°C 1 0.1 0.01 100 0.1 1 Collector current I 10 MIG20J503H – 1.5 2 2.5 3 (V) CE – 25°C 2 2.5 3 3.5 ( off ...
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... Forward current I Low Side Arm Common cathode 300 L-Load Tc = 100°C 1 0.1 0.01 100 0.1 1 Forward current I 11 MIG20J503H 100 (A) C – 100 (A) F – 100 ...
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... Tc = 100° 0.1 0.01 100 0.1 1 Collector current I Low Side Arm UVD, UVR – Reset level UVR 12 Trip level UVD 125 Case temperature Tc (°C) 12 MIG20J503H – I off off 10 100 (A) C – I off C E off 10 100 ( 100 125 2004-03-16 ...
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... V – 1 13, 15 1.2 0.8 0 100 Case temperature Tc (° (t) 300 100 Tc = 25° 0.1 0.01 0.001 125 0.0001 0.001 0.01 Pulse width t 13 MIG20J503H – Diode IGBT 0 100 (s) w 2004-03-16 ...
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... Package Dimensions: TOSHIBA 2-63A1A Weight (typ.) 14 MIG20J503H Unit: mm 2004-03-16 ...
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... The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 15 MIG20J503H 030619EBA 2004-03-16 ...