MRF9100 Motorola, MRF9100 Datasheet

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MRF9100

Manufacturer Part Number
MRF9100
Description
Manufacturer
Motorola
Datasheet

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MRF9100
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MRF9100L
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 26 volt base station equipment.
• On–Die Integrated Input Match
• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
REV 1
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Charge Device Model
Thermal Resistance, Junction to Case
Designed for GSM and EDGE base station applications with frequencies
100 Watts (CW) Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power, P1dB — 110 Watts (Typ)
Power Gain @ P1dB — 16.5 dB (Typ)
Efficiency @ P1dB — 53% (Typ)
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
MRF9100 MRF9100R3 MRF9100SR3
CASE 465–06, STYLE 1
GSM/EDGE 900 MHz, 110 W, 26 V
CASE 465A–06, STYLE 1
MRF9100SR3
MRF9100R3
(MRF9100SR3)
LATERAL N–CHANNEL
(MRF9100)
RF POWER MOSFETs
(NI–780)
MRF9100
(NI–780S)
M3 (Minimum)
C7 (Minimum)
1 (Minimum)
–65 to +200
+15, –0.5
Class
Value
Max
175
200
1.0
1.0
65
Order this document
by MRF9100/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9100 Summary of contents

Page 1

... CASE 465A–06, STYLE 1 (NI–780S) (MRF9100SR3) Symbol Value Unit V 65 Vdc DSS V +15, –0.5 Vdc GS P 175 Watts D 1.0 W/°C °C T –65 to +200 stg °C T 200 J Class 1 (Minimum) M3 (Minimum) C7 (Minimum) Symbol Max Unit °C/W R 1.0 θJC MRF9100 MRF9100R3 MRF9100SR3 1 ...

Page 2

... Output Mismatch Stress ( Vdc 800 mA 100 W CW out f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF9100 MRF9100R3 MRF9100SR3 2 = 25°C, 50 ohm system unless otherwise noted) Symbol Min I — DSS I — DSS I — ...

Page 3

... Figure 1. MRF9100 Test Circuit Schematic Table 1. MRF9100 Test Circuit Component Designations and Values Designators C1, C13 22 pF, 100B Chip Capacitors, ATC #100B220GW C2, C12 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW C3 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW C4 pF, 100B Chip Capacitors, ATC #100B100GW C6, C14 ...

Page 4

... Figure 2. MRF9100 Test Circuit Component Layout MRF9100 MRF9100R3 MRF9100SR3 4 MRF9100 MOTOROLA RF DEVICE DATA ...

Page 5

... MOTOROLA RF DEVICE DATA Figure 3. MRF9100 Demo Board Schematic MRF9100 MRF9100R3 MRF9100SR3 5 ...

Page 6

... Microstrip Z10 0.198″ x 0.042″ Microstrip Z11 0.253″ x 0.191″ + 0.292″ x 0.061″ Microstrip Z12 0.181″ x 0.042″ Microstrip Z13 0.282″ x 0.042″ Microstrip Taconic RF35, Thickness 0.5 mm, ε Substrate MRF9100 MRF9100R3 MRF9100SR3 6 Description = 3.5 r MOTOROLA RF DEVICE DATA ...

Page 7

... Figure 4. MRF9100 Demo Board Component Layout MOTOROLA RF DEVICE DATA MRF9100 MRF9100 MRF9100R3 MRF9100SR3 7 ...

Page 8

... Figure 5. Power Gain versus Output Power _ Figure 7. Power Gain and Input Return Loss versus Frequency η Figure 9. EVM and Efficiency versus Output Power MRF9100 MRF9100R3 MRF9100SR3 8 TYPICAL CHARACTERISTICS η _ Figure 6. Output Power and Efficiency versus _ _ Figure 8. Power Gain versus Output Power Figure 10 ...

Page 9

... MOTOROLA RF DEVICE DATA Ω Ω Ω MHz 840 2.04 + j0.57 1.62 – j1.65 880 2.20 + j0.16 1.88 – j2.45 920 2.00 – j0.44 1.79 – j2.40 960 2.16 – j0.25 1.47 – j1.82 1000 2.62 – j0.25 1.58 – j1.52 = Complex conjugate of source impedance. impedance at a given output power, voltage, IMD, bias current and frequency MRF9100 MRF9100R3 MRF9100SR3 9 ...

Page 10

... MRF9100 MRF9100R3 MRF9100SR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... ISSUE F (NI–780S) (MRF9100SR3) INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa F bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa F bbb ccc MRF9100 MRF9100R3 MRF9100SR3 11 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF9100 MRF9100R3 MRF9100SR3 12 MOTOROLA RF DEVICE DATA MRF9100/D ...

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