AM29F016D-70FI Advanced Micro Devices, AM29F016D-70FI Datasheet
AM29F016D-70FI
Specifications of AM29F016D-70FI
Related parts for AM29F016D-70FI
AM29F016D-70FI Summary of contents
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... Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig- inally developed the specification, these products will be offered to customers of both AMD and Fujitsu ...
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... Am29F016D 16 Megabit ( 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS 5.0 V 10%, single power supply operation — Minimizes system level power requirements Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm Am29F016B devices High performance — Access times as fast Low power consumption — ...
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... GENERAL DESCRIPTION The Am29F016D Mbit, 5.0 volt-only Flash mem- ory organized as 2,097,152 bytes. The 8 bits of data appear on DQ0–DQ7. The Am29F016D is offered in 48-pin TSOP, 40-pin TSOP, and 44-pin SO packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21551 ...
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... Standby Mode ........................................................................ 10 RESET#: Hardware Reset Pin ............................................... 10 Output Disable Mode.............................................................. 10 Table 2. Sector Address Table........................................................ 11 Autoselect Mode..................................................................... 12 Table 3. Am29F016D Autoselect Codes (High Voltage Method).... 12 Sector Group Protection/Unprotection.................................... 12 Table 4. Sector Group Addresses................................................... 12 Temporary Sector Group Unprotect ....................................... 12 Figure 1. Temporary Sector Group Unprotect Operation................ 13 Hardware Data Protection ...................................................... 13 Low V Write Inhibit ...
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... V Detector CC A0–A20 4 - Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F016D Am29F016D -90 -120 -150 90 120 150 90 120 150 – DQ0 DQ7 Input/Output Buffers Data STB Latch Y-Gating Cell Matrix ...
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... DQ7 6 DQ6 7 DQ5 8 DQ4 DQ3 13 DQ2 14 DQ1 15 DQ0 40-Pin Standard TSOP 40-Pin Reverse TSOP Am29F016D 40 A20 WE# 37 OE# 36 RY/BY# 35 DQ7 34 DQ6 33 DQ5 32 DQ4 DQ3 27 DQ2 26 DQ1 25 ...
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... DQ4 DQ3 15 DQ2 16 DQ1 17 DQ0 48-Pin Standard TSOP 48-Pin Reverse TSOP Am29F016D A20 WE# 43 OE# 42 RY/BY# 41 DQ7 40 DQ6 39 DQ5 38 DQ4 DQ3 ...
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... V = Device Ground Pin Not Connected Internally LOGIC SYMBOL 21 Am29F016D CE# 42 A12 41 A13 40 A14 39 A15 38 A16 37 A17 36 A18 35 A19 A20 WE# 29 OE# 28 ...
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... Valid Combinations EC, EI, FC, FI, AM29F016D-70 E4C, E4I, F4C, F4I, SC, SI AM29F016D-90 EC, EI, EE, FC, FI, FE, AM29F016D-120 E4C, E4I, E4E, F4C, F4I, F4E, SC, SI, SE AM29F016D-150 8 = Commercial ( + Industrial (– + Extended (– +125 C) = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048) ...
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... The register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. The contents of Table 1. Am29F016D Device Bus Operations Operation Read Write CMOS Standby ...
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... CC3 Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state Am29F016D , the device enters IL SS (during Embedded Algorithms). The (not during Embedded Algo- READY after the RE- RH ...
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... Am29F016D Address Range 000000h-00FFFFh 010000h-01FFFFh 020000h-02FFFFh 030000h-03FFFFh 040000h-04FFFFh 050000h-05FFFFh 060000h-06FFFFh 070000h-07FFFFh 080000h-08FFFFh 090000h-09FFFFh 0A0000h-0AFFFFh 0B0000h-0BFFFFh 0C0000h-0CFFFFh 0D0000h-0DFFFFh 0E0000h-0EFFFFh 0F0000h-0FFFFFh 100000h-10FFFFh 110000h-11FFFFh 120000h-12FFFFh 130000h-13FFFFh 140000h-14FFFFh 150000h-15FFFFh 160000h-16FFFFh 170000h-17FFFFh 180000h-18FFFFh ...
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... V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage Method) table. In addi- tion, when verifying sector protection, the sector ad- Table 3. Am29F016D Autoselect Codes (High Voltage Method) Description CE# OE# WE# A20-A18 A17-A10 Manufacturer ID ...
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... CE# and WE# must be a logical zero while OE logical one. Power-Up Write Inhibit If WE device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. Am29F016D power-up and CC Write Inhibit is less than V , the device does not ac- LKO ...
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... Typical timeout for full chip erase 2 N Max. timeout for byte/word write 2 N Max. timeout for buffer write 2 times typical Max. timeout per individual block erase 2 N Max. timeout for full chip erase 2 Am29F016D Description Description N µs N µs (00h = not supported ...
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... Simultaneous Operation Not Supported Supported Burst Mode Type Not Supported Supported Page Mode Type Not Supported Word Page Word Page ACC supply minimum ACC supply maximum Top/bottom boot sector flag 2 = bottom top. If address 2Ch = 01h, ignore this field Am29F016D N 15 ...
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... When the Embedded Program algorithm is complete, the device then returns to reading array data and ad- dresses are no longer latched. The system can deter- mine the status of the program operation by using DQ7, DQ6, or RY/BY#. See “Write Operation Status” for in- formation on these status bits. Am29F016D ...
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... The system is not required to provide any con- trols or timings during these operations. The Command Definitions table shows the address and data require- ments for the chip erase command sequence. Am29F016D START Write Program Command Sequence Data Poll ...
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... See “Write Operation Status” for information on these status bits. After an erase-suspended program operation is com- plete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or Am29F016D ...
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... Write Erase Command Sequence Data Poll from System No Data = FFh? Yes Erasure Completed Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation Am29F016D Embedded Erase algorithm in progress 19 ...
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... Command Definitions Table 9. Am29F016D Command Definitions Command Sequence (Note 1) Read (Note 5) 1 Reset (Note 6) 1 Manufacturer ID 4 Autoselect Device ID 4 (Note 7) Sector Group Protect 4 Verify (Note 8) CFI Query (Note 9) 1 Program 4 Unlock Bypass 3 Unlock Bypass Program (Note 10) 2 Unlock Bypass Reset (Note 11) ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29F016D Yes Yes PASS 21 ...
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... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not complete the operation successfully, and Am29F016D ...
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... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 5. Toggle Bit Algorithm Am29F016D (Note 1) No (Notes Program/Erase Operation Complete ...
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... DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See “DQ5: Exceeded Timing Limits” for more information. 24 Table 10. Write Operation Status DQ7 DQ5 (Note 1) DQ6 (Note 2) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29F016D DQ2 DQ3 (Note 1) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N/A 0 ...
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... Operating ranges define those limits between which the functionality of the device is guaranteed. +0.8 V –0.5 V –2.0 V Figure 6. Maximum Negative to –2 2.0 V for +2 +0.5 V 2.0 V Figure 7. Maximum Positive Am29F016D Overshoot Waveform Overshoot Waveform 25 ...
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... CC CC RESET 0 Max RESET Min –2.5 mA Min –100 Min Am29F016D Min Typ Max Unit 1.0 µA 50 µA 1.0 µ 0.4 1.0 mA 0.4 1.0 mA –0.5 0 11.5 12.5 V 0.45 V 2.4 V 3.2 4 ...
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... Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F016D All speed options Unit 1 TTL gate L 100 0.45–2.4 V ...
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... Max Read Min Toggle and Min Data# Polling Max Max Min Max t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 9. Read Operation Timings Am29F016D Speed Options -70 -90 -120 -150 70 90 120 150 70 90 120 150 70 90 120 150 ...
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... RESET# RY/BY# CE#, OE# RESET# Test Setup Max Max Min Min Min Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 10. RESET# Timings Am29F016D All Speed Options Unit 20 µs 500 ns 500 ...
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... See the “Erase And Programming Performance” section for more information. 30 Parameter Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Max Min Min Am29F016D Speed Options -70 -90 -120 -150 Unit 70 90 120 150 ...
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... RY/BY# t VCS V CC Note program address program data WPH A0h t BUSY is the true data at the program address. OUT Figure 11. Program Operation Timings Am29F016D Read Status Data (last two cycles WHWH1 Status D OUT ...
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... RY/BY# t VCS V CC Note Sector Address Valid Address for reading status data. Figure 12. Chip/Sector Erase Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase Am29F016D WHWH2 In Complete Progress t t BUSY RB ...
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... Figure 14. Toggle Bit Timings (During Embedded Algorithms Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F016D VA High Z Valid Data True High Z Valid Data True VA VA Valid Status Valid Data (stops toggling) 33 ...
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... Figure 16. Temporary Sector Group Unprotect Timings 34 Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 15. DQ2 vs. DQ6 Min Min Program or Erase Command Sequence t RSP Am29F016D Erase Resume Erase Erase Complete Read All Speed Options 500 VIDR Unit ns ...
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... Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. Parameter Description Min Min Min Min Min Min Min Min Min Min Typ Typ Max Am29F016D Speed Options -70 -90 -120 -150 70 90 120 150 ...
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... PA for program SA for sector erase XXX for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F016D PA DQ7# D OUT = Array Data. OUT ...
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... V, 1,000,000 cycles 5.0 Volt, one pin at a time. CC Test Conditions OUT Test Conditions 150 C 125 C Am29F016D Unit Comments sec Excludes 00h programming prior to erasure (Note 4) sec µs Excludes system-level overhead (Note 5) sec , 1,000,000 cycles. Additionally, CC Min Max –1 1 – ...
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... PHYSICAL DIMENSIONS TS 040—40-Pin Standard Thin Small Outline Package 38 Am29F016D Dwg rev AA; 10/99 ...
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... PHYSICAL DIMENSIONS (continued) TSR040—40-Pin Reverse Thin Small Outline Package Am29F016D Dwg rev AA; 10/99 39 ...
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... PHYSICAL DIMENSIONS (continued) TS 048—48-Pin Standard Thin Small Outline Package 40 Am29F016D Dwg rev AA; 10/99 ...
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... PHYSICAL DIMENSIONS (continued) TSR048—48-Pin Reverse Thin Small Outline Package Am29F016D Dwg rev AA; 10/99 41 ...
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... PHYSICAL DIMENSIONS (continued) SO 044—44-Pin Small Outline Package 42 Am29F016D Dwg rev AC; 10/99 ...
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... Added references to availability of device in Known Good Die (KGD) form. . These param- Revision D (November 16, 1999) AC Characteristics—Figure 11. Program Operations Timing and Figure 12. Chip/Sector Erase Operations Deleted t GHWL high. Physical Dimensions Replaced figures with more detailed illustrations. Am29F016D , I : Added Note 2 “Maximum I CC4 = V ”. CC CCmax = V Max ...
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... Revision E (May 19, 2000) Global Changed part number to Am29F016D. This reflects the new 0.23 µm process technology upon which this de- vice will now be built. The Am29F016D is compatible with the previous 0.32 µm Am29F016B device, with the exception of the sec- tor group protect and unprotect algorithms. These algo- rithms are provided in a seperate document ...