MX29LV320TTC-90 Macronix International Co., MX29LV320TTC-90 Datasheet

MX29LV320TTC-90

Manufacturer Part Number

MX29LV320TTC-90

Description

Manufacturer

Macronix International Co.

Datasheets

1.MX29LV320TTC-90.pdf (63 pages)

2.MX29LV320TTC-90.pdf (63 pages)

3.MX29LV320TTC-90.pdf (62 pages)

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FEATURES

GENERAL FEATURES

• 4,194,304 x 8 / 2,097,152 x 16 switchable

• Sector Structure

• Extra 64K-Byte sector for security

• Twenty-Four Sector Groups

• Single Power Supply Operation

• Latch-up protected to 250mA from -1V to Vcc + 1V

• Low Vcc write inhibit is equal to or less than 1.4V

• Compatible with JEDEC standard

PERFORMANCE

• High Performance

GENERAL DESCRIPTION

The MX29LV320T/B is a 32-mega bit Flash memory or-

ganized as 4M bytes of 8 bits and 2M words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29LV320T/B is packaged in 48-pin TSOP and

48-ball CSP. It is designed to be reprogrammed and

erased in system or in standard EPROM programmers.

The standard MX29LV320T/B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29LV320T/B has separate chip enable (CE) and

output enable (OE) controls.

P/N:PM0742

- 8K-Byte x 8 and 64K-Byte x 63

- Features factory locked and identifiable, and cus-

tomer lockable

- Provides sector group protect function to prevent pro-

gram or erase operation in the protected sector group

- Provides chip unprotect function to allow code chang-

ing

- Provides temporary sector group unprotect function

for code changing in previously protected sector groups

- 2.7 to 3.6 volt for read, erase, and program opera-

tions

- Pinout and software compatible to single power sup-

ply Flash

- Fast access time: 70/90/120ns

- Fast program time: 7us/word typical utilizing acceler-

ate function

- Fast erase time: 1.6s/sector, 112s/chip (typical)

32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE

• Low Power Consumption

• Minimum 100,000 erase/program cycle

• 10-year data retention

SOFTWARE FEATURES

• Erase Suspend/ Erase Resume

• Status Reply

• Support Common Flash Interface (CFI)

HARDWARE FEATURES

• Ready/Busy (RY/BY) Output

• Hardware Reset (RESET) Input

• WP/ACC input pin

PACKAGE

• 48-Pin TSOP

• 48-Ball CSP

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV320T/B uses a command register to manage

this functionality.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and program mechanisms. In addition, the

combination of advanced tunnel oxide processing

and low internal electric fields for erase and

programming operations produces reliable cycling.

- Low active read current: 10mA (typical) at 5MHz

- Low standby current: 200nA (typical)

- Suspends sector erase operation to read data from

or program data to another sector which is not being

erased

- Data polling & Toggle bits provide detection of pro-

gram and erase operation completion

- Provides a hardware method of detecting program

and erase operation completion

- Provides a hardware method to reset the internal state

machine to read mode

- Provides accelerated program capability

MX29LV320T/B

3V ONLY FLASH MEMORY

REV. 1.4, JUL. 04, 2003

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