PTB20151 Ericsson Microelectronics, PTB20151 Datasheet

PTB20151

Manufacturer Part Number

PTB20151

Description

Manufacturer

Ericsson Microelectronics

Datasheet

1.PTB20151.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

PTB20151

Manufacturer:

EPCOS

Quantity:

1 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

PTB20151R

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

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Description

The 20151 is a class AB, NPN common emitter RF power transistor

intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts

minimum output power for PEP applications, it is specifically intended

for operation as a final or driver stage in CDMA or TDMA systems.

Ion implantation, nitride surface passivation and gold metallization

ensure excellent device reliability. 100% lot traceability is standard.

Maximum Ratings

9/28/98

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage (collector open)

Collector Current (continuous)

Total Device Dissipation at T flange = 25° C

Storage Temperature Range

Thermal Resistance (T flange = 70° C)

Above 25°C derate by

Typical Output Power vs. Input Power

Input Power (Watts)

f = 2.0 GHz

= 100 mA

= 26 V

PCN/PCS Power Transistor

45 Watts, 1.8–2.0 GHz

Class AB Characteristics

40% Collector Efficiency at 45 W

Gold Metallization

Silicon Nitride Passivated

Symbol

CER

CBO

EBO

STG

Package 20223

–40 to +150

Value

PTB 20151

0.85

200

4.0

7.7

1.2

Watts

Unit

W/°C

°C/W

Vdc

Adc

°C

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PTB20151 Summary of contents

Page 1

Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications specifically intended for operation as ...

Page 2

PTB 20151 Electrical Characteristics (100% Tested) Characteristic Conditions Breakdown Voltage Breakdown Voltage Breakdown Voltage ...

Page 3

Output Power vs. Supply Voltage Supply Voltage (Volts Impedance Data ( Vdc 100 mA) CC OUT CQ Z ...

Page 4

PTB 20151 Z Test Circuit Artwork (1 inch ) Parts Layout (not to scale) 5/4/ ...

Page 5

Thermally linked to RF device. Schematic for GHz Q1 PTB 20151 NPN RF Transistor 1, 9 Microstrip GHz Microstrip 75 3 .065 2 GHz Microstrip 16 4 .095 2 GHz Microstrip 12.5 ...

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