T90RIA80 Vishay Semiconductors, T90RIA80 Datasheet - Page 3

• Manufacturer Part Number: T90RIA80
• Manufacturer: Vishay Semiconductors

Note
(1)
Document Number: 93756
Revision: 03-Jun-08
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation voltage
Critical rate of rise of
off-state voltage
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average
gate power
Maximum peak gate current
Maximum peak
negative gate voltage
Maximum required
DC gate voltage to trigger
Maximum required
DC gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. T90RIA80S90
Medium Power Phase Control Thyristors
SYMBOL
SYMBOL
P
V
dV/dt
I
I
-V
P
dI/dt
RRM
V
V
DRM
G(AV)
I
I
I
ISOL
GM
GD
GT
(Power Modules), 50 A/70 A/90 A
GM
GT
GD
GT
,
For technical questions, contact: [e-mail]
T
50 Hz, circuit to base, all terminals shorted, T
T
T
T
T
T
T
T
T
T
T
T
V
I
t
For repetitive value use 40 % non-repetitive
Per JEDEC STD. RS397, 5.2.2.6
g
r
J
J
J
J
J
J
J
J
J
J
J
J
D
< 0.5 µs, t
= 400 mA for T50RIA and I
= T
= T
= T
= T
= T
= - 40 °C
= 25 °C
= T
= - 40 °C
= 25 °C
= T
= T
= 0.67 rated V
J
J
J
J
J
J
J
J
maximum
maximum, linear to 80 % rated V
maximum, t
maximum, f = 50 Hz
maximum, t
maximum
maximum
maximum, rated V
p
≥ 6 µs
DRM
TEST CONDITIONS
p
p
≤ 5 ms
≤ 5 ms
, I
TEST CONDITIONS
TM
DRM
= 2 x rated dI/dt
g
= 500 mA for T70RIA/T90RIA;
applied
Anode supply = 6 V,
resistive load; Ra = 1 Ω
DRM
(1)
J
= 25 °C, t = 1 s
Vishay High Power Products
T50RIA T70RIA T90RIA UNITS
250
100
200
180
160
150
2.5
2.5
4.0
2.5
1.5
0.2
5.0
10
10
50
T..RIA Series
VALUES
270
120
200
180
160
150
4.0
2.5
1.5
0.2
6.0
12
10
60
3
3
3500
500
15
www.vishay.com
270
120
200
180
160
150
4.0
2.5
1.5
0.2
6.0
12
10
60
3
3
UNITS
V/µs
mA
V
A/µs
mA
mA
W
A
V
V
V
3