SKM100GB125DN Semikron International, SKM100GB125DN Datasheet
SKM100GB125DN
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SKM100GB125DN Summary of contents
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SKM 100GB125DN ® SEMITRANS 2N Ultra Fast IGBT Module SKM 100GB125DN Features Typical Applications GB 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 21-05-2007 RAA Values Units min. typ. max. Units © by SEMIKRON ...
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SKM 100GB125DN ® SEMITRANS 2N Ultra Fast IGBT Module SKM 100GB125DN Features Typical Applications GB 2 Characteristics Symbol Conditions Inverse Diode Module This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies ...
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SKM 100GB125DN ® SEMITRANS 2N Ultra Fast IGBT Module SKM 100GB125DN Features Typical Applications Symbol Conditions Z th(j-c)l Z th(j-c)D 21-05-2007 RAA Values Units © by SEMIKRON ...
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SKM 100GB125DN Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = Fig. 5 Typ. transfer characteristic 4 Fig. 2 Rated current vs. temperature I CC'+ EE' Fig. 4 Typ. turn-on /-off ...
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SKM 100GB125DN Fig. 7 Typ. switching times vs Fig. 9 Transient thermal impedance Fig. 11 Typ. CAL diode peak reverse recovery current 5 Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 CAL diode forward characteristic ...
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SKM 100GB125DN UL Recognized 6 21-05-2007 RAA File 63 532 © by SEMIKRON ...