7MBR50SB140 Fuji Electric holdings CO.,Ltd, 7MBR50SB140 Datasheet - Page 4

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7MBR50SB140

Manufacturer Part Number
7MBR50SB140
Description
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
IGBT Module
1000
5000
1000
500
100
500
100
50
50
40
30
20
10
0
10
10
0
ton
toff
tf
Vcc=800V, VGE=±15V, Rg= 24 ohm, Tj= 25°C
tr
Switching time vs. Collector current (typ.)
Vcc=800V, Ic=50A, VGE=±15V, Tj= 125°C
Switching time vs. Gate resistance (typ.)
Vcc=800V, Ic=50A, VGE=±15V, Tj= 25°C
Switching loss vs. Gate resistance (typ.)
20
Gate resistance : Rg [ ohm ]
Gate resistance : Rg [ ohm ]
Collector current : Ic [ A ]
50
50
[ Inverter ]
[ Inverter ]
[ Inverter ]
40
100
100
60
Eon
Eoff
Err
ton
toff
tr
tf
500
500
80
1000
500
100
120
100
50
20
18
16
14
12
10
80
60
40
20
8
6
4
2
0
0
0
0
0
200
toff
Vcc=800V, VGE=±15V, Rg= 24 ohm, Tj= 125°C
tf
ton
+VGE=15V, -VGE=<15V, Rg=>24 ohm, Tj=<125°C
tr
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
20
Collector - Emitter voltage : VCE [ V ]
Vcc=800V, VGE=±15V, Rg=24 ohm
400
20
Reverse bias safe operating area
Collector current : Ic [ A ]
Collector current : Ic [ A ]
600
40
[ Inverter ]
[ Inverter ]
[ Inverter ]
800
40
60
1000
7MBR50SB140
1200
60
80
Err(125°C)
Eoff(25°C)
Err(25°C)
Eon(125°C)
Eon(25°C)
Eoff(125°C)
1400
1600
100
80

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