MBN400C20 Renesas Electronics Corporation., MBN400C20 Datasheet

MBN400C20

Manufacturer Part Number

MBN400C20

Description

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.MBN400C20.pdf (4 pages)

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Collector Emitter Cut-Off Current

Gate Emitter Leakage Current

Input Capacitance

Silicon N-channel IGBT

FEATURES

* High thermal fatigue durability.

* low noise due to built-in free-wheeling

*High speed,low loss IGBT module.

*Low driving power due to low input

*High reliability,high durability module.

* Isolated head sink (terminal to base).

ABSOLUTE MAXIMUM RATINGS (Tc=25

Collector Emitter Voltage

Gate Emitter Voltage

Collector Current

Forward Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Isolation Voltage

Screw Torque

Notes: (1)Recommended Value 1.8±0.2/9±1N.m

CHARACTERISTICS (Tc=25

Collector Emitter Saturation Voltage

Gate Emitter Threshold Voltage

Switching Times

Peak Forward Voltage Drop

Reverse Recovery Time

Thermal Impedance

Notes:(3) R

diode - ultra soft fast recovery diode(USFD).

capacitance MOS gate.

IGBT MODULE

(delta Tc=70°C,N>20,000cycles)

MBN400C20

(4) Counter arm IGBT V

Item

Determine the suitable R

(overshoot voltage,etc.)with appliance mounted.

value is the test condition’s value for decision of the switching times, not recommended value.

Item

IGBT

FWD

Turn On Time

Rise Time

Fall Time

Turn Off Time

Terminals

Mounting

(M4/M8)

(M5)

1ms

°C

=-15V

)

value after the measurement of switching waveforms

Symbol

Rth(j-c)

Symbol

CE(sat)

GE(TO)

GES

CES

off

ies

°C

CES

GES

ISO

stg

)

°C/W

Unit

(2)Recommended Value 2.6±0.2N.m

OUTLINE DRAWING

Weight: 350 (g)

Unit

N.m

°C

Min.

RMS

4.0

Typ.

1.4

1.7

1.8

4.0

2.4

0.5

4.2

5.1

0.033

Max.

±200 V

0.10

100

7.0

2.3

2.4

5.9

3.4

0.9

5.2

2.6

4.0 V

TERMINALS

L=200nH

-Ic=400A,V

Vcc=1,000V,-Ic=400A,L=200nH,

Tc=125°C (4)

=400A,V

=12W

4,000(AC 1 minute)

=2,000V,V

=±20V,V

=10V, I

=10V,V

=1,000V,Ic=400A

=±15V Tc=125°C

MBN400C20

-40 ~ +125

2,000

3,000

Test Conditions

Junction to case

±20

400

800

400

800

(3)

=15V

=400mA

2/10

=0V,f=100KHz

=0V

2.8

=0V

Unit in mm

(2)

(1)

PDE-N400C20-0

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MBN400C20 Summary of contents

Page 1

... 2.4 3 0.5 0.9 rr Rth(j- 0.033 °C/W Rth(j- 0.10 value after the measurement of switching waveforms Unit TERMINALS MBN400C20 2,000 ±20 400 800 400 800 3,000 -40 ~ +125 -40 ~ +125 4,000(AC 1 minute) 2/10 (1) 2.8 (2) Test Conditions 4.0 V =2,000V,V = =±20V,V = =400A,V =15V C ...

Page 2

TYPICAL 1000 15V GE 14V 500 Collector to Emitter Voltage, V (V) CE Collector current vs. Collector to Emitter voltage TYPICAL 1000 ...

Page 3

TYPICAL 0.5 full 10% 0.4 0.3 0.2 [Conditions Tc=125°C =1000V V CC 10% 10 Lp≈200nH 0.1 0 RG(on)=12Ω RG(off)=12Ω Eoff(10%)= C CE =±15V ...

Page 4

HITACHI POWER SEMICONDUCTORS 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this ...

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