MG200Q2YS65H TOSHIBA Semiconductor CORPORATION, MG200Q2YS65H Datasheet
MG200Q2YS65H
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MG200Q2YS65H Summary of contents
Page 1
... Weight: 430 g (typ.) Symbol Rating V 1200 CES ±20 V GES I 200 C I 400 CP I 200 F I 400 FM P 1310 C T 150 j -40 to 125 T stg 2500 V Isol (AC 1 minute) ¾ 3 N▪m ¾ MG200Q2YS65H ― ― 2-109C4A Unit °C °C V 2002-10-04 Unit: mm ...
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... ± off Tc = 125° (off) 2 MG200Q2YS65H Min Typ. Max = 0 ¾ ¾ ±500 = 0 ¾ ¾ 2 ¾ 4.0 7 25°C ¾ 3.0 4 125°C ¾ ¾ 3 MHz ¾ ¾ 17000 ¾ ...
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... Gate-emitter voltage V 400 Common cathode 300 200 Tc = 125°C 100 Forward voltage V 3 MG200Q2YS65H – (sat Common emitter Tc = 125° ( – Common emitter Tc = 125° ...
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... Gate resistance R 1000 Common emitter 600 200 ±15 V 100 25° 125°C 1 1000 1 Gate resistance R 4 MG200Q2YS65H Switching time – (off) t off 25° 125°C 100 1000 (A) C Switching time – off ...
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... MHz Tc = 25°C 100 1600 2000 0.01 1000 100 < = 125° ± 4.7 W 0.1 1200 1400 0 ( MG200Q2YS65H C – ies C oes Cres 0 100 Collector-emitter voltage V (V) CE Reverse bias SOA 500 1000 1500 Collector-emitter voltage V (V) CE ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. MG200Q2YS65H 6 000707EAA 2002-10-04 ...