MG400Q1US65H TOSHIBA Semiconductor CORPORATION, MG400Q1US65H Datasheet

Page 1

... Weight: 465 g (typ.) Symbol Rating Unit V 1200 V CES ± GES I 400 800 CP I 400 800 FM P 2650 150 °C j −40 to 125 T °C stg 2500 V V Isol (AC 1 minute) ⎯ 3 N·m ⎯ MG400Q1US65H Unit: mm ― ― 2-109F1A 2003-12-19 ...

Page 2

... ± 2.4 Ω 125°C off (off) t off 2 MG400Q1US65H Min Typ. Max Unit ⎯ ⎯ ±500 nA ⎯ ⎯ 4.0 mA ⎯ 4.0 7.0 V ⎯ 3.0 4.0 V ⎯ ⎯ 3.6 ⎯ ⎯ 34000 pF ⎯ ⎯ 0.05 ⎯ ...

Page 3

... Gate-emitter voltage 800 Common cathode 600 400 Tc = 125°C 200 25° Forward voltage V 3 MG400Q1US65H CE (sat Common emitter Tc = 125° (V) CE – Common emitter Tc = 125° 800 A 400 A ...

Page 4

... Switching loss – R 1000 Common emitter 600 400 ±15 V 100 25° 125°C 1 500 0 10 Gate resistance R 4 MG400Q1US65H C t off t d (off 25° 125°C 100 1000 ( Common emitter 600 400 ± ...

Page 5

... MHz Tc = 25°C 100 4000 0.01 0.1 Collector-emitter voltage V Reverse bias SOA 1000 100 < = 125° ± 2.4 Ω 0.1 1400 0 500 Collector-emitter voltage MG400Q1US65H CE C ies C oes Cres 1 10 100 (V) CE 1000 1500 (V) CE 2003-12-19 ...

Page 6

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. MG400Q1US65H 6 030619EAA 2003-12-19 ...