BSM150GB120DN2 Siemens Semiconductor Group, BSM150GB120DN2 Datasheet
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Manufacturer Part Number
BSM150GB120DN2
Description
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Manufacturer
Siemens Semiconductor Group
Available stocks
Part Number:
BSM150GB120DN2
Part Number:
BSM150GB120DN2
Manufacturer:
INFINEON/英飞凌
Part Number:
BSM150GB120DN2
Part Number:
BSM150GB120DN2 E
Part Number:
BSM150GB120DN2 F_E3256
IGBT Power Module
Semiconductor Group
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 150 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 210A
CE
I
C
1
Package
HALF-BRIDGE 2
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
BSM 150 GB 120 DN2
55 / 150 / 56
-55 ... + 150
Values
Ordering Code
C67076-A2108-A70
+ 150
± 20
1200
1200
1250
2500
210
150
420
300
F
0.25
20
11
0.1
Mar-28-1996
Unit
V
A
W
°C
K/W
Vac
mm
-
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BSM150GB120DN2 Summary of contents
IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current ...
Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 150 ...
Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 5.6 Gon Rise time V = 600 ...
Power dissipation tot C parameter: T 150 °C j 1300 W 1100 P tot 1000 900 800 700 600 500 400 300 200 100 Collector current ...
Typ. output characteristics parameter µ ° 300 A 17V 15V I 240 13V C 11V 220 9V 7V 200 180 160 140 120 100 80 ...
Typ. gate charge Gate parameter 150 A C puls 600 200 400 600 Reverse biased safe operating ...
Typ. switching time inductive load , T = 125° par 600 ± ...
Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 300 A I 240 F 220 200 180 T =125°C 160 j 140 120 100 0.0 0.5 1.0 1.5 ...
Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group Circuit Diagram 9 BSM 150 GB 120 DN2 Mar-28-1996 ...
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