IRKT41-08A International Rectifier Corp., IRKT41-08A Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/339/international_rectifier_corp__sml.jpg)
IRKT41-08A
Manufacturer Part Number
IRKT41-08A
Description
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules
Manufacturer
International Rectifier Corp.
Datasheet
1.IRKT56-12.pdf
(11 pages)
Thermal and Mechanical Specifications
Triggering
www.irf.com
Blocking
(5) Available with dv/dt = 1000V/ s, to complete code add S90 i.e. IRKT41/16AS90.
(The following table shows the increment of thermal resistance R
V
dv/dt Max. critical rate of rise
T
T
R
R
T
wt
P
P
I
-V
V
I
I
I
V
I
R Conduction (per Junction)
GM
GD
RRM
DRM
GT
Devices
J
stg
INS
thJC
thCS
GM
G(AV)
GD
GT
IRK.41
IRK.56
GM
Parameters
Max. peak gate power
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. gate voltage
required to trigger
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Parameters
Max. peak reverse and
off-state leakage current
at V
RMS isolation voltage
of off-state voltage (5)
Parameters
Junction operating
temperature range
Storage temp. range
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
Approximate weight
Case style
RRM
, V
180
0.11
0.09
DRM
o
to heatsink
busbar
120
0.13
0.11
Sine half wave conduction
o
0.17
0.13
90
IRK.41
IRK.41
IRK.41
o
0.23
2.5
2.5
10
2500 (1 min)
3500 (1 sec)
TO-240AA
- 40 to 125
- 40 to 125
0.23
0.18
110 (4)
60
0.25
500
270
150
4.0
2.5
1.7
0.1
80
15
o
10
5
3
6
IRK.56
IRK.56
IRK.56
0.34
0.27
30
0.20
thJC
2.5
2.5
10
o
when devices operate at different conduction angles than DC)
180
0.09
0.07
o
Units
Units
K/W
Units
V/ s
Nm
mA
gr (oz)
mA
°C
W
mA
V
A
V
V
120
0.14
0.11
Rect. wave conduction
o
Conditions
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
T
rated V
T
rated V
T
50 Hz, circuit to base, all terminals
shorted
T
gate open circuit
Per module, DC operation
JEDEC
T
T
T
T
T
T
Conditions
Conditions
J
J
J
J
J
J
J
J
J
J
0.18
0.14
= 125
= 125
= 125
90
= - 40°C
= 25°C
= 125°C
= - 40°C
= 25°C
= 125
= 125°C
o
DRM
DRM
o
o
Bulletin I27131 rev. G 10/02
C,
C,
o
o
C, linear to 0.67 V
C, gate open circuit
applied
applied
0.23
0.19
60
IRK.41, .56 Series
o
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
0.34
0.28
30
o
DRM
,
Units
°C/W
3