QM100DY-2HK MITSUBISHI, QM100DY-2HK Datasheet - Page 3

• Manufacturer Part Number: QM100DY-2HK
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

PERFORMANCE CURVES
10
200
160
120
10
10
80
40
–1
COLLECTOR-EMITTER VOLTAGE V
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
10
1
0
1.8
0
COLLECTOR-EMITTER SATURATION
T
–2
BASE-EMITTER VOLTAGE V
j
=25°C
CHARACTERISTICS (TYPICAL)
2
COMMON EMITTER OUTPUT
CHARACTERISTIC (TYPICAL)
COMMON EMITTER INPUT
3
2.2
T
T
1
4
BASE CURRENT I
j
j
VOLTAGE (TYPICAL)
=25°C
=125°C
5
I
C
7
=50A
10
2.6
–1
2
2
3
4
5
3.0
3
7
10
I
100A
B
C
V
T
=
0
(A)
CE
j
=25°C
I
2
C
3.4
I
I
I
I
I
4
=2.0V
=70A
B
B
B
B
B
BE
3
=2.0A
=1.0A
=0.6A
=0.4A
=0.2A
4
I
150A
(V)
C
CE
5
=
7
(V)
3.8
10
5
1
10
10
10
10
10
10
10
10
10
10
10
–1
–1
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
10
10
4
3
2
1
2
1
0
2 3 4 5 7
SWITCHING TIME VS. COLLECTOR
COLLECTOR CURRENT (TYPICAL)
0
MITSUBISHI TRANSISTOR MODULES
0
I
B
CHARACTERISTICS (TYPICAL)
2
2
COLLECTOR CURRENT I
=2A
COLLECTOR CURRENT I
COLLECTOR CURRENT I
3
3
DC CURRENT GAIN VS.
SATURATION VOLTAGE
T
T
T
T
4
4
j
j
V
=25°C
=125°C
j
j
CURRENT (TYPICAL)
=25°C
=125°C
5
5
V
BE(sat)
HIGH POWER SWITCHING USE
7
CE
7
10
10
=2.8V
t
10
f
1
1
1
2
2
3
3
2 3 4 5 7
4
4
QM100DY-2HK
5
5
V
7
7
CE(sat)
V
V
I
10
10
CE
B1
CC
=5.0V
=–I
2
2
=600V
t
on
t
T
T
2
2
s
C
C
C
INSULATED TYPE
B2
j
j
=25°C
=125°C
3
3
(A)
10
(A)
(A)
=2A
4
4
2
5
5
7
7
10
2
10
3
3
Feb.1999