PS21964-C MITSUBISHI, PS21964-C Datasheet

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PS21964-C

Manufacturer Part Number
PS21964-C
Description
TRANSFER-MOLD TYPE INSULATED TYPE
Manufacturer
MITSUBISHI
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PS21964-C
Manufacturer:
DENON
Quantity:
1 400
Part Number:
PS21964-CTV
Manufacturer:
MITSUMI
Quantity:
120
DESCRIPTION
M63812P, M63812FP, M63812GP and M63812KP are
seven-circuit Singe transistor arrays with clamping diodes.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63812P, M63812FP, M63812GP and M63812KP each
have seven circuits consisting of NPN transistor.A spike-
killer clamping diode is provided between each output pin
(collector) and COM pin (pin9). The transistor emitters are all
connected to the GND pin (pin 8). The transistors allow syn-
chronous flow of 300mA collector current. A maximum of 35V
voltage can be applied between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS
V
I
V
I
V
P
T
T
C
F
Symbol
Four package configurations (P, FP, GP and KP)
Medium breakdown voltage (BV
Synchronizing current (I
With clamping diodes
With zener diodes
Low output saturation voltage
Wide operating temperature range (Ta=–40 to +85 C)
opr
stg
CEO
I
R
d
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Parameter
C(max)
= 300mA)
CEO
(Unless otherwise noted, Ta = –40 ~ +85 C)
35V)
Ta = 25 C, when mounted
on board
Output, H
Current per circuit output, L
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
Conditions
M63812P/FP/GP/KP
PIN CONFIGURATION
CIRCUIT DIAGRAM
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Package type
INPUT
INPUT
M63812P
M63812FP
M63812GP
M63812KP
The seven circuits share the COM and GND.
Vz=7V
IN1
IN2
IN3
IN4
IN5
IN6
IN7
GND
10.5k
4
8
1
2
3
5
6
7
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
10k
–55 ~ +125
–0.5 ~ +35
–0.5 ~ +35
–40 ~ +85
16
15
14
13
12
11
10
Ratings
9
1.47
1.00
0.80
0.78
300
300
35
O1
O2
O3
O4
O5
O6
O7
COM COMMOM
COM
OUTPUT
GND
OUTPUT
Unit:
Jan. 2000
Unit
mA
mA
W
V
V
V
C
C

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PS21964-C Summary of contents

Page 1

... I I Clamping diode forward current F V Clamping diode reverse voltage R P Power dissipation d T Operating temperature opr T Storage temperature stg MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE PIN CONFIGURATION IN1 1 IN2 2 IN3 3 IN4 4 INPUT IN5 5 IN6 ...

Page 2

... L (3)Electrostatic capacity C includes floating capacitance at L connections and input capacitance at probes MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE (Unless otherwise noted –40 ~ +85 C) Test conditions Duty Cycle no more than 45% Duty Cycle no more than 100% Duty Cycle no more than 30% ...

Page 3

... Duty cycle (%) MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE 0.744 0.520 1 0.418 0.406 0 0 ...

Page 4

... – 0.05 0.10 0.15 Output saturation voltage V (V) CE(sat) MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63812GP/KP) 400 1~2 300 200 6 7 •The collector current values 100 represent the current per circuit. ...

Page 5

... Clamping Diode Characteristics 250 200 150 100 – 0.4 0.8 1.2 1.6 Forward bias voltage V (V) F MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer Characteristics 250 200 150 100 Input voltage V 2 ...

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