QM150DY-24K MITSUBISHI, QM150DY-24K Datasheet - Page 4

• Manufacturer Part Number: QM150DY-24K
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
10
10
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
10
0
10
2
1
0
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
10
–1
TRANSIENT THERMAL IMPEDANCE
0
–3
BASE REVERSE CURRENT –I
T
NON–REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
t
t
2
3
3
3
s
f
4
4
4
3 4 5
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
1
–2
1
TIME (s)
7
2
2
2
10
3
3
4
4
0
5
5
7
7
V
I
I
B1
C
10
2 3 4 5 7
10
CC
=150A
=3A
–1
=600V
2
100µs
T
T
2
2
j
j
=25°C
=125°C
3
3
B2
4
4
50µs
5
5
(A)
CE
7
7
10
(V)
10
10
1
3
0
320
280
240
200
160
120
100
10
10
10
10
80
40
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
3
2
7
5
3
2
7
5
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
0.4
T
T
j
j
400
I
=25°C
=125°C
40
B2
HIGH POWER SWITCHING USE
=–6A
60
0.8
–V
CEO
800
80
(V)
QM150DY-24K
1.2
100 120
I
B2
SECOND
BREAKDOWN
AREA
=–3A
1200
T
j
C
=125°C
1.6
INSULATED TYPE
( C)
140
CE
1600
160
2.0
(V)
Feb.1999