PM75B4LB060 MITSUBISHI, PM75B4LB060 Datasheet
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PM75B4LB060
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PM75B4LB060 Summary of contents
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... MITSUBISHI <INTELLIGENT POWER MODULES> PM75B4LB060 FEATURE a) Adopting new 5th generation IGBT (CSTBT performance is improved by 1µm fine rule process. For example, typical V b) Over-temperature protection by detecting Tj of the CSTBT chips and error output is possible from all each conserva- tion upper and lower arm of IPM. ...
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... P UPC P VPC U • Applied between : UPC FO VPC Sink current terminals PM75B4LB060 FLAT-BASE TYPE INSULATED PACKAGE VP1 VPC O UPC O 1.5k 1.5k GND IN Fo Vcc GND IN Fo Vcc GND SC OT OUT ...
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... V = 15V 0V↔15V D CIN V = 300V 75A 125°C j Inductive Load 15V (Fig CES CIN PM75B4LB060 FLAT-BASE TYPE INSULATED PACKAGE Ratings 450 500 –40 ~ +125 2500 Limits Min. Typ. Max. (Note-1) — — 0.32 (Note-1) 0.53 — — 0.038 — — ...
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... UP1 UPC VP1 VPC Applied between : UPC P VPC U • Using Application Circuit of Fig. 8 For IPM’s each input signals PM75B4LB060 FLAT-BASE TYPE INSULATED PACKAGE Limits Min. Typ. Max. -V — — *P1 *PC 1.2 1.5 1.8 1.7 2.0 2.3 (Fig. 3,6) 150 — ...
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... Fig. 4 Switching Time Test Waveform V CIN P, (U,V) A Pulse U,V, (N) Fo Test CES CIN 1. CIN 2V 1. dead dead Fig. 7 Dead Time Measurement Point Example PM75B4LB060 FLAT-BASE TYPE INSULATED PACKAGE P, (U, – U,V, (N) (all) D Fig Test EC trr V CE Irr Ic 90% 90% 10% 10% 10% tc(on) tc(off) ...
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... SC IN ≥10µ GND GND 1. Fig. 8 Application Example Circuit ≤ 0.8µs, Use High CMR type. PHL ). Also, care should be taken to minimize the instantaneous voltage charge of the D PM75B4LB060 FLAT-BASE TYPE INSULATED PACKAGE Output Oct. 2005 ...
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... C PM75B4LB060 FLAT-BASE TYPE INSULATED PACKAGE COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL 15V 25° 125° 100 COLLECTOR CURRENT I (A) C SWITCHING TIME CHARACTERISTICS (TYPICAL) ...
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... Single Pulse 2 Per unit base = R – –5 10 – PM75B4LB060 FLAT-BASE TYPE INSULATED PACKAGE (TYPICAL 300V 15V 25° 125°C ...