GA200TS60UPBF Vishay Semiconductors, GA200TS60UPBF Datasheet - Page 5
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GA200TS60UPBF
Manufacturer Part Number
GA200TS60UPBF
Description
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
Manufacturer
Vishay Semiconductors
Datasheet
1.GA200TS60UPBF.pdf
(8 pages)
Document Number: 94545
Revision: 04-May-10
查询"GA200TS60UPbF"供应商
20000
15000
10000
5000
1000
100
10
Fig. 11 - Typical Forward Voltage Drop vs.
0
Fig. 12 - Typical Stored Charge vs. dI
500
1.0
Instantaneous Forward Current
400 A, 125 °C
V
2.0
FM
- Forward Voltage Drop (V)
1000
dI
200 A, 125 °C
F/
3.0
100 A, 125 °C
dt (A/µs)
400 A, 25 °C
T = 25 °C
4.0
T = 125 °C
J
J
200 A, 25 °C
1500
100 A, 25 °C
For technical questions, contact:
5.
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
6.0
2000
F
/dt
indmodules@vishay.com
Fig. 13 - Typical Reverse Recovery Time vs. dI
20000
15000
10000
5000
250
200
150
100
Fig. 14 - Typical Reverse Recovery vs. dI
50
0
0
500
500
Vishay High Power Products
400 A, 125 °C
200 A, 125 °C
100 A, 125 °C
400 A, 125 °C
1000
1000
dI
200 A, 125 °C
F/
dI
GA200TS60UPbF
100 A, 125 °C
dt (A/µs)
F/
400 A, 25 °C
dt (A/µs)
200 A, 25 °C
1500
1500
100 A, 2 5°C
400 A, 25 °C
200 A, 25 °C
100 A, 25 °C
2000
2000
www.vishay.com
F
/dt
F
/dt
5