TL082SG-13 Diodes Inc, TL082SG-13 Datasheet - Page 4

IC OPAMP JFET DUAL 8-SOIC

TL082SG-13

Manufacturer Part Number
TL082SG-13
Description
IC OPAMP JFET DUAL 8-SOIC
Manufacturer
Diodes Inc
Datasheet

Specifications of TL082SG-13

Amplifier Type
J-FET
Number Of Circuits
2
Slew Rate
13 V/µs
Gain Bandwidth Product
3MHz
Current - Input Bias
30pA
Voltage - Input Offset
3000µV
Current - Supply
1.4mA
Voltage - Supply, Single/dual (±)
10 V ~ 30 V, ±5 V ~ 15 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
Current - Output / Channel
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
 Details
Other names
TL082SG-13DITR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TL082SG-13
Manufacturer:
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Quantity:
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Part Number:
TL082SG-13
Manufacturer:
DIODES/美台
Quantity:
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Company:
Part Number:
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Electrical Characteristics
Notes:
TL082 Rev. 1
Symbol
V
CMRR
O1
THD
V
k
V
α
A
SR
V
θ
θ
I
Vn
B
I
v
I
SVR
In
CC
tr
ICR
r
IO
IB
OM
VD
/V
JA
JC
IO
i
IO
1
O2
9. Test condition for SOP-8L: Devices mounted on FR-4 substrate PC board, with minimum recommended pad layout.
Input Offset Voltage
Temperature Coefficient
of Input Offset Voltage
Input Offset Current
Input Bias Current
Common Mode
Input Voltage Range
Maximum Peak
Output Voltage Swing
Large Signal Differential
Voltage Amplification
Unity Gain Bandwidth
Input Resistance
Common Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
(ΔV
Supply Current
(each amplifier)
Crosstalk Attenuation
Slew Rate at Unity Gain
Rise Time
Overshoot Factor
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
Total Harmonic
Distortion
Thermal Resistance
Junction-to-Ambient
Thermal Resistance
Junction-to-Case
CC
±/ΔV
Parameter
IO
)
V
R
V
V
V
R
R
R
V
R
T
V
R
V
V
R
V
No load
A
V
R
(See Figure 1)
V
(See Figure 1)
R
R
V
R
f=1kHz
SOP-8L (Note 9)
SOP-8L (Note 9)
A
O
O
O
O
O
IC
CC
O
O
VD
I
I
Irms
S
L
L
L
L
S
S
L
S
S
L
=10V, C
=20mV, R
=25
=10kΩ, T
≧10kΩ,
≧2kΩ
≧2kΩ
=2kΩ
≧2kΩ, R
=0,
=50Ω
=0, R
=0
=0
=±10V,
=50Ω, T
=0
=50Ω, T
=0, T
=20Ω
=20Ω, f=1kHz
=V
=±9 to ±15V
=100, T
=6V, A
(V
ICRmin
o
CC±
C
A
S
GENERAL PURPOSE JFET INPUT OPERATIONAL
=25
Test Conditions
=50Ω, T
www.diodes.com
L
, V
A
A
=100pF,
VD
A
= ±15V, T
A
=25
=25
S
L
=25
=25
≦1kΩ,
=2kΩ, C
o
=1,
O
f=1kHz
f=10 Hz to 10kHz
C
=0
4 of 11
o
o
o
C
C
o
A
C
C
= full range
T
T
T
T
T
T
T
T
T
T
T
L
A
=100pF
A
A
A
A
A
A
A
A
A
A
A
= 25
=25
= full range
=25
= full range
=25
= full range
= full range
=25
= full range
=25
= full range
o
o
o
o
o
o
C
C
C
C
C
C; unless otherwise noted)
Min
±11
±12
±12
±10
50
25
75
80
8
5
-12~+15
±13.5
0.003
Typ.
0.05
0.01
10
±12
200
120
145
1.4
18
30
86
86
13
20
18
35
3
5
3
4
12
AMPLIFIERS
©
Max
100
200
2.8
10
20
Diodes Incorporated
6
9
TL082
JULY 2009
pA
nV
μV/
V/mV
o
o
MHz
V/μs
Unit
mV
mA
C/W
C/W
pA
nA
pA
nA
dB
dB
dB
μV
μs
%
%
V
V
o
ΗΖ
HZ
C

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