CM75BU-12H_09 MITSUBISHI, CM75BU-12H_09 Datasheet - Page 2
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CM75BU-12H_09
Manufacturer Part Number
CM75BU-12H_09
Description
Manufacturer
MITSUBISHI
Datasheet
1.CM75BU-12H_09.pdf
(4 pages)
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Note 1. Pulse width and repetition rate should be such that the device junction temperature (T
V
V
I
I
I
I
P
T
T
V
I
V
I
V
C
C
C
Q
t
t
t
t
V
t
Q
R
R
R
C
CM
E
EM (Note 2)
CES
GES
d (on)
r
d (off)
f
rr
Symbol
Symbol
stg
j
CES
GES
C (Note 3)
iso
GE(th)
CE(sat)
ies
oes
res
EC(Note 2)
th(j-c)Q
th(j-c)R
th(c-f)
G
rr (Note 2)
—
—
2. I
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (T
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
(Note 2)
(Note 2)
E
, V
EC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
(Tj = 25
Item
Item
C
) measured point is shown in page OUTLINE DRAWING.
j
) should not increase beyond 150°C.
°
C, unless otherwise specified)
(Note 5)
(Tj = 25
V
V
T
Pulse
T
Pulse
T
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M4 screw
Mounting M5 screw
Typical value
V
I
±V
I
V
V
V
V
V
R
Resistive load
I
I
die / dt = –150A / µs
Junction to case, IGBT part (Per 1/4 module)
Junction to case, FWDi part (Per 1/4 module)
Case to heat sink, conductive grease applied
(Per 1/4 module)
E
E
C
C
C
C
C
GE
CE
CE
CE
GE
CC
CC
GE
G
= 75A, V
= 75A,
= 7.5mA, V
= 75A, V
GE
= 25°C
= 25°C
= 25°C
= 8.3Ω
°
= 0V
= V
= 0V
= 10V
= 0V
= 300V, I
= 300V, I
= ±15V
C, unless otherwise specified)
= V
CES
GES
GE
GE
, V
, V
C
C
CE
= 0V
GE
= 15V
= 75A, V
= 75A
CE
= 10V
= 0V
= 0V
Test Conditions
Conditions
GE
2
—
—
= 15V
(Note 4)
j
) does not exceed T
T
T
j
j
= 25°C
= 125°C
(Note 1)
(Note 1)
(Note 6)
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
jmax
Min
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
rating.
–40 ~ +150
–40 ~ +125
CM75BU-12H
1.3 ~ 1.7
2.5 ~ 3.5
Ratings
Limits
2500
0.18
600
±20
150
150
310
390
Typ
150
75
75
—
—
—
—
—
—
—
—
—
—
—
—
—
2.4
2.6
0.1
INSULATED TYPE
6
Max
100
250
200
300
160
7.5
0.5
3.0
—
6.6
3.6
—
2.6
—
0.4
0.9
—
1
1
Feb. 2009
Vrms
K/W
K/W
K/W
Unit
N·m
N·m
Unit
mA
µA
nC
µC
nF
nF
nF
°C
°C
ns
ns
ns
ns
ns
W
V
V
V
A
A
A
A
V
V
g