2MBI300P-140 Fuji Electric holdings CO.,Ltd, 2MBI300P-140 Datasheet

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2MBI300P-140

Manufacturer Part Number
2MBI300P-140
Description
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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IGBT MODULE ( P-Series )
n n Features
• Square SC SOA at 10 x I
• Simplified Parallel Connection
• Narrow Distribution of Characteristics
• High Short Circuit Withstand-Capability
n n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n n Maximum Ratings and Characteristics
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Thermal Resistance
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Items
Items
Items
Continuous T
Continuous T
1ms
1ms
1ms
A.C. 1min.
C
( at T
T
T
C
C
C
C
=25°C
=80°C
=25°C
=80°C
2MBI 300P-140
( T
j
=25°C )
c
=25°C
Note: *1:Recommendable Value; 2.5
Mounting *1
Terminals *2
-I
-I
Symbols
V
V
I
I
P
T
T
V
)
C
C PULSE
C
C PULSE
CES
GES
C
j
stg
is
*2:Recommendable Value; 3.5
I
I
V
V
C
C
C
t
t
t
t
V
t
Symbols
Symbols
CES
GES
ON
r
OFF
f
rr
GE(th)
CE(sat)
F
ies
oes
res
R
R
R
th(j-c)
th(j-c)
th(c-f)
-40
Ratings
IGBT
Diode
With Thermal Compound
1400
2500
+150
2500
400
300
800
600
300
600
3.5
4.5
20
+125
V
V
V
T
T
V
V
f=1MHz
V
I
V
R
I
I
3.5 Nm (M5) or (M6)
4.5 Nm (M6)
C
F
F
j
j
GE
CE
GE
GE
CE
CC
GE
=300A V
=300A
= 25°C V
=125°C V
=300A
G
=2.7
=0V V
=10V
n n Outline Drawing
=0V V
=20V I
=0V
=600V
= 15V
Test Conditions
Test Conditions
Units
°C
°C
W
GE
CE
C
GE
Nm
V
V
V
A
=300mA
GE
GE
=1400V
= 20V
=0V
=15V I
=15V I
C
C
=300A
=300A
n n Equivalent Circuit
Min.
Min.
6.0
0.0167
30000
Typ.
Typ.
4500
2000
8.0
2.7
3.3
2.4
2-Pack IGBT
Max.
Max.
0.05
0.10
1400V
600
350
3.0
9.0
3.0
1.2
0.6
1.0
0.3
3.3
300A
Units
Units
°C/W
mA
µA
pF
ns
V
µs
V
V

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2MBI300P-140 Summary of contents

Page 1

IGBT MODULE ( P-Series ) n n Features • Square SC SOA • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n n Applications • High Power Switching • A.C. ...

Page 2

Collector Current vs. Collector-Emitter Voltage ° Collector-Emitter Voltage ...

Page 3

Switching Time vs =600V, I =300A ± 100 Gate Resistance : R G Forward ...

Page 4

Switching Loss vs. Collector Current =2 ± 100 100 200 300 400 Collector Current : I [A] C ...

Page 5

For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com ...

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