2MBI600VJ-120-50 Fuji Electric holdings CO.,Ltd, 2MBI600VJ-120-50 Datasheet

2MBI600VJ-120-50

Manufacturer Part Number

2MBI600VJ-120-50

Description

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.2MBI600VJ-120-50.pdf (6 pages)

Current page: 1 of 6
Download datasheet (407Kb)

2MBI600VJ-120-50

IGBT MODULE (V series)

1200V / 600A / 2 in one package

Note *1: All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.

Note *3: Recommendable value : 2.5-3.5 Nm (M5)

Note *5: Recommendable value : 0.4-0.6 Nm (M2.5)

Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.

Items

Junction temperature

Operating junction temperature (under switching conditions) T

Case temperature

Storage temperature

Isolation voltage

Screw torque

Items

Thermal resistance (1device)

Contact thermal resistance (1device) (*6)

Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)

Electrical characteristics (at Tj= 25°C unless otherwise specified)

Thermal resistance characteristics

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplifier

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power dissipation

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Resistance

B value

between terminal and copper base (*1)

between thermistor and others (*2)

Mounting (*3)

Terminals (*4)

PC-Board (*5)

Note *4: Recommendable value : 3.5-4.5 Nm (M6)

Symbols

(terminal)

(chip)

Cies

ton

tr (i)

toff

(terminal)

(chip)

trr

Symbols

Rth(j-c)

Rth(c-f)

CES

GES

GE (th)

CE (sat)

Symbols

Ic pulse

-Ic

-Ic pulse

Tstg

jop

CES

GES

iso

Conditions

T=25°C

T=100°C

T=25/50°C

Conditions

Inverter IGBT

Inverter FWD

with Thermal Compound

= 600A

= 0.62Ω

= 0V, V

= 20V, I

= 15V

= 10V, V

= 600V

= ±15V

= 0V

Conditions

Continuous

1ms

1 device

AC : 1min.

= ±20V

= 600mA

= 1200V

= 0V, f = 1MHz

Tc=80°C

Tj=25°C

Tj=125°C

Tj=150°C

Tj=25°C

Tj=125°C

Tj=150°C

Tj=25°C

Tj=125°C

Tj=150°C

Tj=25°C

Tj=125°C

Tj=150°C

3305

min.

465

6.0

Maximum ratings

http://www.fujisemi.com

Characteristics

-40 to +125

1200

3750

2500

0.0167

±20

600

175

150

125

3.5

4.5

0.6

5000

1050

3375

2.85

2.20

2.25

2.40

2.45

2.80

1.85

2.30

2.45

1.70

1.85

1.80

typ.

200

495

550

180

120

110

6.5

IGBT Modules

max.

1200

2000

3450

2.75

0.04

0.06

2.90

2.30

2.15

600

350

600

520

3.0

7.0

Units

VAC

N m

°C

Units

°C/W

nsec

Ω

Related parts for 2MBI600VJ-120-50

2MBI600VJ-120-50 Summary of contents

Page 1

... IGBT MODULE (V series) 1200V / 600A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) ...

Page 2

... Characteristics (Representative) [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1400 VGE=20V15V 1200 1000 800 600 400 200 Collector-Emitter voltage: VCE [V] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip 1400 1200 1000 Tj=25°C 800 600 400 ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=25°C 10000 1000 100 10 0 500 Collector current: Ic [A] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C 10000 o Tj=125 C o Tj=150 C 1000 100 10 0.1 1 Gate resistance: Rg [Ω] [INVERTER] Switching loss vs ...

Page 4

... Forward Current vs. Forward Voltage (typ.) chip 1400 1200 1000 800 600 400 200 150° Forward on voltage: VF [V] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=125°C, 150°C 10000 o Tj=125 C o Tj=150 C 1000 100 10 0 500 ...

Page 5

... Outline Drawings, mm Equivalent Circuit Schematic GND GND Cu-Base Cu-Base [ Inverter ] + + CX1 CX1 G1.2 G1.2 G1.3 G1.3 G1.1 G1.1 EX1.2 EX1.2 EX1.3 EX1.3 EX1.1 EX1.1 G2.2 G2.2 G2.3 G2.3 G2.1 G2.1 EX2.2 EX2.2 EX2.3 EX2.3 EX2.1 EX2.1 5 IGBT Modules http://www.fujisemi.com [ Thermistor ] ...

Page 6

... This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co ...

Related keywords

2MBI600VJ-120-50 datasheet
2MBI600VJ-120-50 data sheet
2MBI600VJ-120-50 pdf datasheet
2MBI600VJ-120-50 component
2MBI600VJ-120-50 part
2MBI600VJ-120-50 distributor
2MBI600VJ-120-50 RoHS
2MBI600VJ-120-50 datasheet download