CM75DU-12H_09 MITSUBISHI, CM75DU-12H_09 Datasheet - Page 4

• Manufacturer Part Number: CM75DU-12H_09
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
10
20
15
10
–1
–2
–3
5
0
7
5
3
2
7
5
3
2
7
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
1
10
1
0
10
SWITCHING TIME CHARACTERISTICS
0
GATE CHARGE CHARACTERISTICS
0
–3
I
T
V
V
R
Single Pulse
T
C
j
CC
GE
2 3 5 7
C
G
IMPEDANCE CHARACTERISTICS
Per unit base = R
= 125°C
= 75A
COLLECTOR CURRENT I
= 25°C
= 8.3Ω
2
= 300V
= ±15V
GATE CHARGE Q
TRANSIENT THERMAL
10
50
3
–2
HALF-BRIDGE
2 3 5 7
5 7
( TYPICAL )
( TYPICAL )
( IGBT part )
TIME ( s )
V
100
10
10
10
CC
1
–1
th(j – c)
–5
= 200V
2 3 5 7
2 3 5 7
2
G
V
= 0.4K/W
150
( nC )
10
3
10
CC
–4
C
0
= 300V
2 3 5 7
2 3 5 7
( A )
5 7
t
t
t
t
f
d(off)
r
d(on)
200
10
10
10
10
10
10
2
3
2
7
5
3
2
7
5
3
2
–3
1
–1
–2
–3
4
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
0
–3
– di /dt = 150A /µs
T
Single Pulse
T
IMPEDANCE CHARACTERISTICS
j
2 3 5 7
C
Per unit base = R
= 25°C
= 25°C
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
TRANSIENT THERMAL
10
3
–2
2 3 5 7
HIGH POWER SWITCHING USE
5 7
( FWDi part )
( TYPICAL )
TIME ( s )
MITSUBISHI IGBT MODULES
10
10
10
1
–1
th(j – c)
–5
2 3 5 7
2 3 5 7
2
CM75DU-12H
= 0.9K/W
10
10
3
E
( A )
0
–4
INSULATED TYPE
2 3 5 7
2 3 5 7
5 7
t
I
rr
rr
10
10
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
2
3
2
7
5
3
2
7
5
3
2
–3
1
2
1
0
–1
–2
–3
Feb. 2009