MG150J1ZS50 TOSHIBA Semiconductor CORPORATION, MG150J1ZS50 Datasheet
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Manufacturer Part Number
MG150J1ZS50
Manufacturer
TOSHIBA Semiconductor CORPORATION
Available stocks
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance
l Includes a complete half bridge in one package.
l Enhancement-mode
l High speed : t
l Low saturation voltage
Equivalent Circuit
Maximum Ratings
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
Collector current
Forward current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
: V
CE (sat)
Characteristics
= 2.70V (max) (I
t
f
rr
= 0.30µs (max) (I
= 0.15µs (max) (I
(Ta = 25°C)
DC
1ms
DC
1ms
TOSHIBA GTR Module Silicon N Channel IGBT
C
MG150J1ZS50
= 150A)
C
F
= 150A)
= 150A)
Symbol
V
V
V
T
I
I
GES
V
P
CES
I
CP
FM
―
I
T
Isol
stg
C
F
R
C
j
(AC 1 min.)
−40 ~ 125
1
Rating
2500
3 / 3
600
±20
600
150
300
150
300
780
150
JEDEC
JEITA
TOSHIBA
Unit
N·m
°C
°C
W
V
V
V
A
A
V
2-95A3A
MG150J1ZS50
―
―
2001-08-16
Unit: mm
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MG150J1ZS50 Summary of contents
... CES V ±20 GES V 600 R I 150 C I 300 CP I 150 F I 300 FM P 780 C T 150 j T −40 ~ 125 stg 2500 V Isol (AC 1 min.) ― MG150J1ZS50 Unit: mm ― ― 2-95A3A Unit °C °C V N·m 2001-08-16 ...
... off 600V 150A 150A −10V 200A / µs Transistor stage R th (j-c) Diode stage 2 MG150J1ZS50 Min Typ. Max = 0 ― ― ±500 = 0 ― ― 2.0 5.0 7.0 8.0 ― 2.10 2.70 ― 14200 ― ― 0.15 0.30 ― 0.15 0.30 ― 0.50 1.00 ― ...
... MG150J1ZS50 2001-08-16 ...
... MG150J1ZS50 2001-08-16 ...
... MG150J1ZS50 2001-08-16 ...
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 MG150J1ZS50 000707EAA 2001-08-16 ...
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