CM100DU-12H_09 MITSUBISHI, CM100DU-12H_09 Datasheet - Page 4

• Manufacturer Part Number: CM100DU-12H_09
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
10
10
20
15
10
–1
–2
–3
5
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
1
0
10
SWITCHING TIME CHARACTERISTICS
0
7
GATE CHARGE CHARACTERISTICS
–3
I
Single Pulse
T
10
C
2 3 5 7
C
IMPEDANCE CHARACTERISTICS
Per unit base = R
= 100A
1
COLLECTOR CURRENT I
= 25°C
50
GATE CHARGE Q
TRANSIENT THERMAL
2
10
t
t
d(on)
r
–2
100
HALF-BRIDGE
3
2 3 5 7
( TYPICAL )
( TYPICAL )
( IGBT part )
V
TIME ( s )
5 7
CC
t
t
150
f
d(off)
10
10
= 200V
–1
th(j – c)
–5
10
2 3 5 7
2 3 5 7
2
200
V
G
V
V
R
CC
= 0.31K/W
T
CC
GE
G
( nC )
2
10
10
j
= 6.3Ω
= 300V
= 125°C
–4
C
0
= 300V
= ±15V
250
3
2 3 5 7
2 3 5 7
( A )
5 7
300
10
10
10
10
10
3
2
7
5
3
2
7
5
3
2
–3
1
–1
–2
–3
4
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
1
0
10
7
–3
Single Pulse
T
10
IMPEDANCE CHARACTERISTICS
2 3 5 7
C
Per unit base = R
1
= 25°C
EMITTER CURRENT I
OF FREE-WHEEL DIODE
TRANSIENT THERMAL
2
10
–2
3
2 3 5 7
HIGH POWER SWITCHING USE
( FWDi part )
( TYPICAL )
TIME ( s )
MITSUBISHI IGBT MODULES
5 7
10
10
t
I
rr
rr
–1
–5
th(j – c)
10
– di /dt = 200A /µs
T
2 3 5 7
2 3 5 7
j
= 25°C
2
CM100DU-12H
= 0.7K/W
2
10
10
E
( A )
0
–4
INSULATED TYPE
3
2 3 5 7
2 3 5 7
5 7
10
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
–3
1
2
1
0
–1
–2
–3
Feb. 2009