PM50CLA120_05 MITSUBISHI, PM50CLA120_05 Datasheet - Page 3

• Manufacturer Part Number: PM50CLA120_05
• Description: FLAT-BASE TYPE INSULATED PACKAGE
• Manufacturer: MITSUBISHI

(Note-1) T
TOTAL SYSTEM
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS (Tj = 25 C, unless otherwise noted)
INVERTER PART
* If you use this value, R
V
V
T
V
R
R
R
axis
V
V
t
t
t
t
t
I
on
rr
c(on)
off
c(off)
CES
Symbol
Symbol
CC(PROT)
stg
Symbol
CC(surge)
iso
CE(sat)
EC
th(j-c)Q
th(j-c)F
th(c-f)
X
Y
arm
C
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
Junction to case Thermal
Resistances
Contact Thermal Resistance
(under the chip) measurement point is below.
IGBT
28.3
–7.7
Parameter
UP
Parameter
Parameter
FWDi
28.4
th(f-a)
1.5
should be measured just under the chips.
IGBT
65.0
–7.7
VP
FWDi
64.9
1.5
V
T
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
–I
V
V
T
Inductive Load
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
V
V
V
D
j
D
CC
j
CE
D
CIN
C
= +125 C Start
= 125 C
= 13.5 ~ 16.5V, Inverter Part,
= 15V, V
= 15V, I
= 50A, V
IGBT
= V
87.0
–7.7
= 600V, I
= 0V
CES
WP
C
, V
CIN
FWDi
D
86.9
= 50A
1.5
C
CIN
= 15V, V
= 50A
= 0V 15V
= 15V
Bottom view
IGBT
39.3
5.7
Condition
Condition
Condition
CIN
UN
= 15V
FWDi
39.2
–3.5
(Fig. 5)
(Fig. 1)
IGBT
54.0
5.7
T
T
T
T
VN
j
j
j
j
= 25 C
= 125 C
= 25 C
= 125 C
FWDi
54.1
–3.5
(Fig. 3,4)
(Note-1)
(Note-1)
(Note-1)
(Fig. 2)
IGBT
76.0
5.7
(Unit : mm)
WN
Min.
Min.
0.5
FWDi
—
—
—
—
—
—
—
—
—
—
—
—
76.1
–3.5
INSULATED PACKAGE
–40 ~ +125
PM50CLA120
Ratings
Limits
Limits
1000
2500
Typ.
Typ.
800
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
—
—
—
—
FLAT-BASE TYPE
0.038
Max.
Max.
0.26*
0.39*
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
10
1
May 2005
V
Unit
Unit
Unit
C/W
mA
V
rms
V
V
V
C
s