QM50TX-HB MITSUBISHI, QM50TX-HB Datasheet
QM50TX-HB
Available stocks
Related parts for QM50TX-HB
QM50TX-HB Summary of contents
Page 1
... OUTLINE DRAWING & CIRCUIT DIAGRAM 68 8 11–M4 (10) 18.5 18.5 18.5 80± 0.25 94 LABEL 13 MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE • I Collector current .......................... 50A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 18 ...
Page 2
... CE V =300V, I =50A, I =100mA, –I =1. Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 310 3 500 –40~+150 –40~+125 2500 0 ...
Page 3
... I =25A –1 10 – (A) B MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) V =5. =2. =25° =125° ...
Page 4
... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.2 0 COLLECTOR-EMITTER REVERSE VOLTAGE QM50TX-HB INSULATED TYPE I =–1.5A B2 =–3.5A B2 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125°C j 1.0 1 ...
Page 5
... – FORWARD CURRENT QM50TX-HB INSULATED TYPE =300V CC I =100mA B1 I =–1. =25° =125°C j – ...