180NQ045PBF Vishay Semiconductors, 180NQ045PBF Datasheet - Page 4

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180NQ045PBF

Manufacturer Part Number
180NQ045PBF
Description
Manufacturer
Vishay Semiconductors
Datasheet
180NQ045PbF
Vishay High Power Products
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
= Inverse power loss = V
160
150
140
130
120
110
100
90
80
Fig. 5 - Maximum Allowable Case Temperature vs.
0
See note (1)
Square wave (D = 0.50)
80 % rated V
C
I
F(AV)
= T
50
J
- Average Forward Current (A)
Average Forward Current
- (Pd + Pd
R
applied
F(AV)
100
R1
Current
monitor
REV
x V
x I
FM
) x R
R
D.U.T.
150
DC
(1 - D); I
For technical questions, contact: ind-modules@vishay.com
at (I
thJC
100 000
10 000
F(AV)
1000
;
200
R
Fig. 8 - Unclamped Inductive Test Circuit
/D) (see fig. 6);
Fig. 7 - Maximum Non-Repetitive Surge Current
at V
10
Schottky Rectifier, 180 A
t
R1
p
- Square Wave Pulse Duration (µs)
250
= Rated V
R
IRFP460
g
= 25 Ω
L
100
R
At any rated load condition
and with rated V
following surge
Freewheel
40HFL40S02
diode
1000
High-speed
RRM
switch
200
180
160
140
120
100
applied
80
60
40
20
0
0
Fig. 6 - Forward Power Loss Characteristics
10 000
I
+
F(AV)
20
V
d
= 25 V
- Average Forward Current (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
40
60
DC
80
Document Number: 94148
100
Revision: 28-Apr-08
120
RMS limit
140
160

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