APT60GT60JRDQ3 Advanced Power Technology, APT60GT60JRDQ3 Datasheet

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APT60GT60JRDQ3

Manufacturer Part Number
APT60GT60JRDQ3
Description
Manufacturer
Advanced Power Technology
Datasheet
The Thunderblot IGBT
Through Technology, the Thunderblot IGBT
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Thunderbolt IGBT
1
(V
• High Freq. Switching to 100KHz
• Ultra Low Leakage Current
CE
CE
CE
= V
= 600V, V
= 600V, V
APT Website - http://www.advancedpower.com
®
®
GE
GE
C
C
offers superior ruggedness and ultrafast
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 700µA, T
GE
GE
C
C
= 0V, I
= 0V, T
= 0V, T
= 60A, T
= 60A, T
®
C
j
j
j
= 330µA)
= 25°C)
= 125°C)
= 25°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
MIN
600
APT60GT60JRDQ3
3
360A @ 600V
APT60GT60JRDQ3
-55 to 150
600
±30
105
360
379
300
TYP
48
2.0
2.8
4
APT60GT60JRDQ3
ISOTOP
G
600V
2500
MAX
±100
330
2.5
5
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT60GT60JRDQ3 Summary of contents

Page 1

... 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 600V APT60GT60JRDQ3 APT60GT60JRDQ3 ISOTOP ® 25°C unless otherwise specified. C APT60GT60JRDQ3 600 ±30 105 48 360 360A @ 600V 379 -55 to 150 300 MIN TYP MAX 600 2.0 2.5 2.8 330 ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

PULSE TEST<0.5 % DUTY 160 CYCLE 140 120 100 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.15 1.10 1.05 1.00 0.95 ...

Page 4

V = 15V 400V 25°C or 125° 4.3Ω 100µ 100 120 I , COLLECTOR TO EMITTER ...

Page 5

... C J ° 4. 400V 4.3Ω Figure 20, Operating Frequency vs Collector Current APT60GT60JRDQ3 100 200 300 400 500 600 700 V , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1.0 10 ...

Page 6

APT60DQ60 90% Gate Voltage t d(off) 90% CollectorVoltage t f 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J Gate Voltage 10% t d(on) 90% ...

Page 7

... Z are the external thermal EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT60GT60JRDQ3 = 25°C unless otherwise specified. C APT60GT60JRDQ3 60 79 600 MIN TYP MAX 1.8 2.2 1.9 MIN TYP MAX 160 = 25° ...

Page 8

T = 175°C J 100 125° -55° 25° 0.5 1.0 1.5 2 ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. ...

Page 9

... Figure 33, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP ® ) Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches) APT60GT60JRDQ3 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25 ...

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