MIG150J7CSB1W TOSHIBA Semiconductor CORPORATION, MIG150J7CSB1W Datasheet - Page 4

• Manufacturer Part Number: MIG150J7CSB1W
• Description: TOSHIBA Intelligent Power Module Silicon N Channel IGBT
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Maximum Ratings
Electrical Characteristics
Inverter
Brake
Control
Module
1. Inverter stage
Collector cut-off current
Collector-emitter saturation voltage
Forward voltage
Switching time
Note 1: Switching time test circuit & timing chart
Stage
Supply voltage
Collector-emitter voltage
Collector current
Forward current
Collector power dissipation
Junction temperature
Supply voltage
Collector-emitter voltage
Collector current
Reverse voltage
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Input voltage
Fault output voltage
Fault output current
Operating temperature
Storage temperature Range
Isolation voltage
Screw torque (Terminal)
Screw torque (Mounting)
Characteristics
(T
Characteristic
j
= = = = 25°C)
V
Symbol
CE (sat)
t
t
I
c (on)
c (off)
CEX
V
t
t
t
on
off
rr
F
P-N Power terminal
Tc = 25°C, DC
Tc = 25°C, DC
Tc = 25°C, DC
P-N Power terminal
Tc = 25°C, DC
Tc = 25°C, DC
Tc = 25°C
V
IN-GND Terminal
FO-GND Terminal
FO sink current
AC 1 min
M4
M5
V
V
I
V
I
V
V
Tj = 25°C, Inductive load
C
F
D
CE
D
IN
CC
D
= 150 A, Tj = 25°C
= 150 A
-GND Terminal
4
= 15 V
= 15 V, V
= 15 V ® 0 V
= 600 V
= 300 V, I
Test Condition
IN
Condition
C
= 15 V « 0 V
¾
¾
¾
¾
¾
¾
¾
= 150 A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
(Note 1)
Symbol
Min
V
V
1.6
V
Tstg
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
V
MIG150J7CSB1W
V
I
P
V
P
V
CES
CES
Tc
¾
¾
I
I
FO
I
Tj
I
Tj
ISO
CC
CC
FO
C
C
F
F
IN
C
R
C
D
Typ.
1.9
2.1
2.4
1.3
0.3
0.3
1.1
0.2
¾
¾
-20~ + 100
-40~ + 125
Rating
2500
450
600
150
150
740
150
450
600
600
460
150
75
75
20
20
20
14
2
3
2001-11-13
Max
2.3
2.8
2.2
2.1
10
¾
¾
¾
¾
1
N･m
Unit
Unit
mA
mA
°C
°C
°C
°C
ms
W
W
V
V
A
A
V
V
A
V
A
V
V
V
V
V
V