183NQ100PBF Vishay Semiconductors, 183NQ100PBF Datasheet - Page 4

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183NQ100PBF

Manufacturer Part Number
183NQ100PBF
Description
Schottky Rectifier, 180 A
Manufacturer
Vishay Semiconductors
Datasheet
183NQ100PbF
Vishay High Power Products
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
= Inverse power loss = V
Fig. 5 - Maximum Allowable Case Temperature vs.
200
180
160
140
120
100
80
60
0
C
Square wave (D=0.50)
80% rated Vr applied
see note (1)
= T
Average Forward Current - I
50
J
Average Forward Current
- (Pd + Pd
100
F(AV)
R1
150
Current
monitor
REV
x V
x I
FM
) x R
R
D.U.T.
(1 - D); I
For technical questions, contact: ind-modules@vishay.com
200
at (I
DC
thJC
F (AV)
F(AV)
;
250
100000
R
(A)
/D) (see fig. 6);
10000
at V
1000
Fig. 7 - Maximum Non-Repetitive Surge Current
Schottky Rectifier, 180 A
300
Fig. 8 - Unclamped Inductive Test Circuit
R1
Square Wave Pulse Duration - t
10
= Rated V
R
IRFP460
g
= 25 Ω
At Any Rated Load Condition
And With Rated V
Following Surge
L
100
R
Freewheel
RRM
40HFL40S02
1000
diode
Applied
High-speed
switch
p
(microsec)
250
200
150
100
Fig. 6 - Forward Power Loss Characteristics
10000
50
0
+
0
Average Forward Current - I
RMS limit
V
d
50
= 25 V
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100 150 200 250 300 350
Document Number: 94461
DC
Revision: 06-May-08
F (AV)
(A)

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