QM400HA-2HB MITSUBISHI, QM400HA-2HB Datasheet - Page 4

• Manufacturer Part Number: QM400HA-2HB
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

0.05
0.04
0.03
0.02
0.01
10
10
10
10
10
10
10
2
2
FORWARD BIAS SAFE OPERATING AREA
7
7
5
4
3
3
7
7
5
4
3
0
2
1
0
7
5
3
2
5
3
2
7
5
3
2
10
7
10
3
2
1
0
10
COLLECTOR-EMITTER VOLTAGE V
10
TRANSIENT THERMAL IMPEDANCE
0
NON-REPETITIVE
T
0
–3
BASE REVERSE CURRENT –I
0
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2 3 4 5 7
3
3
3
T
T
j
j
=25°C
=125°C
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
–2
1
1
TIME (s)
2
2
10
3
3
1
5
5
7
7
10
2 3 4 5 7
10
V
I
I
–1
2
C
B1
200µ
CC
=400A
2
2
t
t
=800mA
s
f
=600V
3
3
B2
S
5
5
(A)
CE
7
7
10
10
10
(V)
100µ
50µ
2
0
3
S
S
1200
1000
800
600
400
200
100
10
10
10
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
3
2
1
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
DISSIPATION
COLLECTOR
T
I
B2
MITSUBISHI TRANSISTOR MODULES
j
COLLECTOR-EMITTER REVERSE
=125°C
20
CHARACTERISTICS) (TYPICAL)
=–8A
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
200
0.4
40
HIGH POWER SWITCHING USE
400
60
0.8
–V
CEO
600
80 100 120 140
QM400HA-2HB
(V)
1.2
800
SECOND
BREAKDOWN
AREA
T
T
j
j
C
=25°C
=125°C
1.6
1000
INSULATED TYPE
( C)
CE
1200
160
2.0
(V)
Feb.1999