QM100DY-2HBK MITSUBISHI, QM100DY-2HBK Datasheet - Page 4

• Manufacturer Part Number: QM100DY-2HBK
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

0.25
0.20
0.15
0.10
0.05
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
3
2
7
5
4
3
2
7
5
4
3
7
5
3
2
7
5
3
2
7
5
3
2
0
1
0
10
10
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
10
3 4 5 7
TRANSIENT THERMAL IMPEDANCE
0
–3
BASE REVERSE CURRENT –I
0
CHARACTERISTIC (TRANSISTOR)
T
NON–REPETITIVE
2
2
2
C
V
I
I
SWITCHING TIME VS. BASE
B1
C
=25°C
CC
3
3
3
=100A
T
T
=200mA
4
4
4
=600V
j
j
=25°C
=125°C
t
t
5
5
5
CURRENT (TYPICAL)
s
f
10
7
7
7
10
10
0
10
1
–2
1
TIME (s)
2 3 4 5 7
2
2
2
3
3
3
4
4
4
5
5
5
7
7
7
10
10
–1
100µs
2
t
10
w
2
2
=50µs
1
3
3
B2
4
4
5
5
(A)
CE
2 3
7
7
(V)
10
10
3
0
200
160
120
100
10
10
10
80
40
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
T
CHARACTERISTICS) (TYPICAL)
20
j
–I
CASE TEMPERATURE T
=125°C
VOLTAGE (DIODE FORWARD
B2
200
COLLECTOR
DISSIPATION
T
T
0.4
=2A
j
j
=25°C
=125°C
40
HIGH POWER SWITCHING USE
60
400
0.8
–V
CEO
QM100DY-2HBK
80
600
(V)
1.2
100 120
SECOND
BREAKDOWN
AREA
800
C
1.6
INSULATED TYPE
( C)
140
CE
1000
160
2.0
(V)
Feb.1999