CM150DU-12H_09 MITSUBISHI, CM150DU-12H_09 Datasheet - Page 4

• Manufacturer Part Number: CM150DU-12H_09
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
10
20
15
10
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
0
2
1
1
7
5
3
2
0
7
5
3
2
7
5
3
2
7
5
3
2
10
10
SWITCHING TIME CHARACTERISTICS
0
GATE CHARGE CHARACTERISTICS
1
–3
I
T
Single Pulse
T
C
j
2 3 5 7
C
IMPEDANCE CHARACTERISTICS
= 125°C
Per unit base = R
= 150A
COLLECTOR CURRENT I
= 25°C
2
GATE CHARGE Q
TRANSIENT THERMAL
100
10
3
–2
HALF-BRIDGE
2 3 5 7
t
d(on)
5 7
( TYPICAL )
( TYPICAL )
( IGBT part )
V
TIME ( s )
t
CC
r
200
10
10
10
= 200V
2
–1
th(j – c)
–5
2 3 5 7
2 3 5 7
t
t
V
f
d(off)
2
CC
G
V
V
R
= 0.21K/W
300
( nC )
10
CC
GE
3
10
= 300V
G
C
0
–4
= 4.2Ω
= 300V
= ±15V
2 3 5 7
2 3 5 7
( A )
5 7
400
10
10
10
10
10
10
3
3
2
7
5
3
2
7
5
3
2
1
–3
–1
–2
–3
4
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
–di/dt = 300A/µs
T
1
–3
Single Pulse
T
j
IMPEDANCE CHARACTERISTICS
2 3 5 7
C
= 25°C
Per unit base = R
= 25°C
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
TRANSIENT THERMAL
3
10
–2
2 3 5 7
HIGH POWER SWITCHING USE
5 7
( FWDi part )
( TYPICAL )
TIME ( s )
MITSUBISHI IGBT MODULES
10
10
10
2
–1
th(j – c)
–5
t
l
rr
rr
2 3 5 7
2 3 5 7
CM150DU-12H
2
= 0.47K/W
3
10
10
E
( A )
–4
0
INSULATED TYPE
2 3 5 7
2 3 5 7
5 7
10
10
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
3
3
2
7
5
3
2
7
5
3
2
–3
1
2
1
0
–1
–2
–3
Feb. 2009