APT10045JLL_03 Advanced Power Technology, APT10045JLL_03 Datasheet
APT10045JLL_03
Manufacturer Part Number
APT10045JLL_03
Description
Manufacturer
Advanced Power Technology
Datasheet
1.APT10045JLL_03.pdf
(5 pages)
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
V
I
E
E
D(on)
DS(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
2
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
(V
DS
C
DS
APT Website - http://www.advancedpower.com
= V
1
C
= 25°C
> I
= 25°C
4
GS
GS
D(on)
DS
, I
2
DS
®
= ±30V, V
GS
D
by significantly lowering R
= 800V, V
= 1000V, V
(V
x R
R
= 2.5mA)
= 0V, I
GS
DS(on)
MOSFET
= 10V, 11.5A)
D
DS
= 250µA)
Max, V
GS
= 0V)
GS
= 0V, T
= 0V)
GS
All Ratings: T
= 10V)
C
= 125°C)
1000V 21A
DS(ON)
C
APT10045JLL
= 25°C unless otherwise specified.
1000
MIN
21
3
APT0045JLL
-55 to 150
ISOTOP
1000
2500
3.68
TYP
±30
±40
460
300
21
84
21
50
®
0.450
±100
MAX
100
500
5
"UL Recognized"
0.450
G
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S
Related parts for APT10045JLL_03
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
APT10045JLL_03 Summary of contents
Page 1
POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
Typical Performance Curves RC MODEL Junction temp. ( ”C) 0.0409 Power 0.225 (Watts) 0.00361 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL > (ON (ON)MAX. 70 250µSEC. PULSE TEST @ <0.5 % ...
Page 4
Typical Performance Curves 83 OPERATION HERE 50 LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA ...
Page 5
Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT15DF120B D.U.T. Figure 20, Inductive Switching Test Circuit r = 4.0 ...