2MBI200NB-120-01 Fuji Electric holdings CO.,Ltd, 2MBI200NB-120-01 Datasheet

2MBI200NB-120-01

Manufacturer Part Number

2MBI200NB-120-01

Description

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.2MBI200NB-120-01.pdf (4 pages)

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Manufacturer

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Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

2MBI200NB-120-01

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2MBI200NB-120-01

· VCE(sat) classified for easy parallel connection

· High speed switching

· Voltage drive

· Low inductance module structure

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Item

Collector-Emitter voltage

Gate-Emitter voltage

Collector

current

Max. power dissipation

Operating temperature

Storage temperature

Isolation voltage

Screw torque

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

Turn-off time

Diode forward on voltage

Reverse recovery time

Item

Thermal resistance

* : This is the value which is defined mounting on the additional cooling fin with thermal compound

1 :

2 :

1200V / 200A 2 in one-package

Electrical characteristics (at Tj=25°C unless otherwise specified)

Thermal resistance characteristics

Absolute maximum ratings

Recommendable value : 2.5 to 3.5 N·m (M5) or (M6)

Recommendable value : 3.5 to 4.5 N·m (M6)

Features

Applications

Maximum ratings and characteristics

Continuous

1ms

(at Tc=25°C unless otherwise specified)

Symbol

Terminals *

-I

Mounting *

-I

Rth(j-c)

Rth(c-f)*

CES

GES

CES

GES

off

stg

GE(th)

CE(sat)

ies

oes

res

pulse

Rating

-40 to +125

AC 2500 (1min.)

Characteristics

Min.

1200

1500

+150

4.5

–

±20

200

400

200

400

–

3.5

4.5

Typ.

32000

11600

10320

Typ.

0.025

–

0.65

0.25

0.85

0.35

Unit

°C

N·m

Max.

2.0

7.5

3.3

1.2

0.6

1.5

0.5

3.0

0.35

0.085

0.18

–

f=1MHz

Conditions

IGBT

Diode

the base to cooling fin

Conditions

=200A, V

=200A

Rank

=200A

=4.7ohm

=0V, V

=10V

=0V, V

=20V, I

=15V, I

=0V

=600V

=±15V

Equivalent Circuit Schematic

CE(sat)

Lenge

2.25 to 2.50V

2.40 to 2.65V

2.55 to 2.80V

3.00 to 3.30V

2.70 to 2.95V

2.85 to 3.10V

=200mA

=200A

=1200V

=±20V

classification

=0V

¤ Current control circuit

C2E1

IGBT Module

Conditions

Ic = 200A

Tj = 25°C

Unit

°C/W

µA

µs

= 15V

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2MBI200NB-120-01 Summary of contents

Page 1

... Features · VCE(sat) classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics (at Tc=25° ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C 500 400 300 200 100 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25° Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=25°C 1000 100 10 0 100 ...

Page 3

... Switching time vs. RG Vcc=600V, Ic=200A, VGE=±15V, Tj=25°C 1000 100 Gate resistance : RG [ohm] Forward current vs. Forward voltage VGE=0V 500 400 300 200 100 Forward voltage : VF [V] Transient thermal resistance 0.1 0.01 0.001 0.001 0.01 Pulse width : PW [sec.] 1000 800 600 400 ...

Page 4

... Switching loss vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V 100 200 Collector current : Ic [A] Outline Drawings, mm 100 300 400 IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25° Collector-Emitter voltage : VCE [V] 35 ...

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