2MBI150SC-120_01 Fuji Electric holdings CO.,Ltd, 2MBI150SC-120_01 Datasheet - Page 2

• Manufacturer Part Number: 2MBI150SC-120_01
• Manufacturer: Fuji Electric holdings CO.,Ltd

2MBI150SC-120
Characteristics (Representative)
50000
10000
5000
1000
350
300
250
200
150
100
350
300
250
200
150
100
500
50
50
0
0
0
0
0
Capacitance vs. Collector-Emiiter voltage (typ.)
Collector current vs. Collector-Emiiter voltage
5
Collector current vs. Collector-Emiiter voltage
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
VGE=0V, f= 1MHz, Tj= 25°C
10
VGE=15V (typ.)
Tj= 25°C (typ.)
2
2
15
VGE= 20V
20
Tj= 25°C
3
3
15V
25
12V
Tj= 125°C
4
4
30
Coes
Cies
Cres
10V
8V
35
5
5
1000
800
600
400
200
350
300
250
200
150
100
10
50
0
8
6
4
2
0
0
0
5
0
Collector-Emiiter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emiiter voltage
1
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
10
Vcc=600V, Ic=150A, Tj= 25°C
Dynamic Gate charge (typ.)
500
Gate charge : Qg [ nC ]
Tj= 25°C (typ.)
Tj= 125°C (typ.)
2
15
3
1000
VGE= 20V
20
IGBT Module
Ic= 300A
Ic= 150A
Ic= 75A
4
15V
10V
8V
12V
1500
25
5
2 5
2 0
1 5
1 0
5
0