QM150DY-2HBK MITSUBISHI, QM150DY-2HBK Datasheet - Page 4

• Manufacturer Part Number: QM150DY-2HBK
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
3
2
7
5
4
3
2
7
5
4
3
7
5
3
2
7
5
3
2
7
5
3
2
0
10
1
0
10
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
10
3 4 5
TRANSIENT THERMAL IMPEDANCE
0
–3
BASE REVERSE CURRENT –I
T
NON–REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
3
3
3
V
I
I
C
B1
T
T
7
CC
4
4
4
=150A
j
j
=25°C
=125°C
=300mA
5
5
5
CURRENT (TYPICAL)
10
=600V
7
7
7
t
t
0
10
10
s
f
10
1
–2
1
TIME (s)
2 3 4 5 7
2
2
2
3
3
3
4
4
5
5
7
7
10
10
100µs
t
–1
2
w
10
=50µs
2
2
1
3
3
B2
4
4
5
5
(A)
CE
2 3
7
7
(V)
10
10
3
0
400
320
240
160
100
10
10
10
10
80
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
3
2
7
5
3
2
7
5
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
T
I
CHARACTERISTICS) (TYPICAL)
20
B2
CASE TEMPERATURE T
j
VOLTAGE (DIODE FORWARD
=125°C
=–3A
200
0.8
COLLECTOR
DISSIPATION
40
HIGH POWER SWITCHING USE
60
400
1.2
–V
CEO
QM150DY-2HBK
80
600
(V)
1.6
100 120
SECOND
BREAKDOWN
AREA
T
T
800
C
j
j
2.0
=25°C
=125°C
INSULATED TYPE
( C)
140
CE
1000
160
2.4
(V)
Feb.1999