APT10025JVFR_04 Advanced Power Technology, APT10025JVFR_04 Datasheet
APT10025JVFR_04
Manufacturer Part Number
APT10025JVFR_04
Description
Manufacturer
Advanced Power Technology
Datasheet
1.APT10025JVFR_04.pdf
(4 pages)
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
• Lower Leakage
• Faster Switching
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
V
I
E
E
D(on)
DS(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
(Repetitive and Non-Repetitive)
1
2
(V
DS
C
APT Website - http://www.advancedpower.com
DS
1
C
= 25°C
= V
• 100% Avalanche Tested
• Popular SOT-227 Package
= 25°C
> I
4
GS
GS
D(on)
2
DS
DS
, I
= ±30V, V
GS
D
(V
= V
= 0.8 V
x R
= 0V, I
= 5mA)
GS
DSS
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250µA)
GS
Max, V
= 0V)
, V
®
= 0V)
GS
D[Cont.]
= 0V, T
GS
All Ratings: T
= 10V)
FREDFET
)
C
= 125°C)
1000V 34A 0.250Ω Ω Ω Ω Ω
APT10025JVFR
C
®
= 25°C unless otherwise specified.
1000
MIN
34
2
APT10025JVFR
-55 to 150
ISOTOP
1000
3600
TYP
136
±30
±40
700
300
5.6
34
34
50
®
0.250
1000
±100
MAX
250
G
"UL Recognized"
4
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S
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APT10025JVFR_04 Summary of contents
Page 1
POWER MOS V Power MOS V ® new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss 3 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t (on) Turn-on Delay Time d t Rise ...
Page 3
APT10025JVFR =6V, 7V, 10V & 15V 100 200 300 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 -55° > (ON) ...
Page 4
OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA ...