MAX9778ETI+T Maxim Integrated Products, MAX9778ETI+T Datasheet - Page 2
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MAX9778ETI+T
Manufacturer Part Number
MAX9778ETI+T
Description
IC AMP AUDIO PWR 2.6W AB 28TQFN
Manufacturer
Maxim Integrated Products
Type
Class ABr
Datasheet
1.MAX9777ETIT.pdf
(27 pages)
Specifications of MAX9778ETI+T
Output Type
2-Channel (Stereo) with Stereo Headphones
Max Output Power X Channels @ Load
2.6W x 2 @ 4 Ohm; 200mW x 2 @ 16 Ohm
Voltage - Supply
4.5 V ~ 5.5 V
Features
Depop, Input Multiplexer, Mute, Shutdown, Thermal Protection,
Mounting Type
Surface Mount
Package / Case
28-TQFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
A A B B S S O O L L U U T T E E M M A A X X I I M M U U M M R R A A T T I I N N G G S S
V
PV
PGND to GND.....................................................................±0.3V
All Other Pins to GND.................................-0.3V to (V
Continuous Input Current (into any pin except power-supply
and output pins) ...............................................................±20mA
OUT__ Short Circuit to GND, V
Short Circuit Between OUT_+ and OUT_- .................Continuous
Stereo 3W Audio Power Amplifiers with
Headphone Drive and Input Mux
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
noted. Typical values are at T
2
DD
Supply Voltage Range
Quiescent Supply Current
(I
Shutdown Current
Switching Time
Turn-On Time
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
OUTPUT AMPLIFIERS (SPEAKER MODE, HPS = GND)
Output Offset Voltage
Power-Supply Rejection Ratio
(Note 2)
Output Power
Total Harmonic Distortion Plus
Noise
Signal-to-Noise Ratio
Slew Rate
Maximum Capacitive Load Drive
Crosstalk
Click/Pop Level
DD
DD
VDD
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
to GND ...........................................................................+6V
= PV
to V
+ I
PVDD
DD
DD
PARAMETER
.......................................................................±0.3V
= 5.0V, GND = PGND = 0V, V
)
A
DD
= +25°C.) (Note 1)
..........................................10s
V
SYMBOL
DD
THD+N
I
PSRR
P
SHDN
SNR
V
K
t
t
I
SR
OUT
C
SW
ON
/PV
DD
OS
CP
L
DD
SHDN
Inferred from PSRR test
BTL mode, HPS = 0V, MAX9777/MAX9778
Single-ended mode, HPS = V
SHDN = GND
Gain or input switching
C
C
OUT_+ - OUT_-, A
V
f = 1kHz, V
f = 20kHz, V
f
THD+N < 1%,
T
f
22Hz to 22kHz
R
No sustained oscillations
f
Peak voltage, A-weighted,
32 samples per second
(Notes 2, 6)
IN
IN
IN
A
= 5V, C
DD
L
BIAS
BIAS
= 1kHz,
= +25°C
= 1kHz, BW =
= 8Ω, P
= 10kHz
DD
= 4.5V to 5.5V
= 1µF
= 0.1µF
+ 0.3V)
BIAS
OUT
RIPPLE
RIPPLE
= 1µF, R
= 1W, BW = 22Hz to 22kHz
CONDITIONS
= 200mV
V
= 200mV
= 1V/V
Continuous Power Dissipation (T
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
R
R
R
P
P
L
L
L
OUT
OUT
IN
28-Pin TQFN, Multilayer Board
(derate 34.5mW/°C above +70°C) ..........................2758.6mW
= 8Ω
= 4Ω
= 3Ω
= R
= 1W, R
= 2W, R
P-P
P-P
Into shutdown
Out of shutdown
F
DD
= 15kΩ, R
L
L
= 8Ω
= 4Ω
L
= ∞. T
A
MIN
4.5
75
= T
A
MIN
= +70°C)
0.005
+160
TYP
0.01
to T
300
100
-50
-65
1.4
2.6
1.6
13
10
10
30
15
±4
82
70
95
73
7
3
1
MAX
, unless otherwise
MAX
±32
5.5
32
18
50
UNITS
V/µs
dBV
mA
mV
ms
dB
dB
dB
µA
µs
o
o
nF
W
%
V
C
C