MAT02AH Analog Devices, MAT02AH Datasheet

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MAT02AH

Manufacturer Part Number
MAT02AH
Description
MAT02AHLow Noise, Matched Dual Monolithic Transistor
Manufacturer
Analog Devices
Datasheet

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MAT02AH
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Quantity:
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a
PRODUCT DESCRIPTION
The design of the MAT02 series of NPN dual monolithic tran-
sistors is optimized for very low noise, low drift, and low r
Precision Monolithics’ exclusive Silicon Nitride “Triple-
Passivation” process stabilizes the critical device parameters
over wide ranges of temperature and elapsed time. Also, the high
current gain (h
range of collector current. Exceptional characteristics of the
MAT02 include offset voltage of 50 V max (A/E grades) and
150 V max F grade. Device performance is specified over the
full military temperature range as well as at 25 C.
Input protection diodes are provided across the emitter-base
junctions to prevent degradation of the device characteristics
due to reverse-biased emitter current. The substrate is clamped
to the most negative emitter by the parasitic isolation junction
created by the protection diodes. This results in complete isola-
tion between the transistors.
The MAT02 should be used in any application where low noise
is a priority. The MAT02 can be used as an input stage to make
an amplifier with noise voltage of less than 1.0 nV/ Hz at 100 Hz.
Other applications, such as log/antilog circuits, may use the ex-
cellent logging conformity of the MAT02. Typical bulk resis-
tance is only 0.3
teristics approach those of an ideal transistor when operated over
a collector current range of 1 A to 10 mA. For applications re-
quiring multiple devices see MAT04 Quad Matched Transistor
data sheet.
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
FEATURES
Low Offset Voltage: 50 V max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/ Hz max
High Gain (h
Excellent Log Conformance: r
Low Offset Voltage Drift: 0.1 V/ C max
Improved Direct Replacement for LM194/394
Available in Die Form
FE
FE
) of the MAT02 is maintained over a wide
): 500 min at I
to 0.4 . The MAT02 electrical charac-
300 min at I
C
C
= 1 mA
= 1 A
BE
0.3
BE
.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage (BV
Collector-Emitter Voltage (BV
Collector-Collector Voltage (BV
Emitter-Emitter Voltage (BV
Collector Current (I
Emitter Current (I
Total Power Dissipation
Operating Temperature Range
Operating Junction Temperature . . . . . . . . . . –55 C to +150 C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65 C to +150 C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300 C
Junction Temperature . . . . . . . . . . . . . . . . . . –65 C to +150 C
NOTES
1
2
3
Model
MAT02AH
MAT02EH
MAT02FH
NOTES
1
2
Derate linearly at 16.4 mW/ C for case temperature above 40 C.
Derate linearly at 6.3 mW/ C for ambient temperature above 70 C.
Absolute maximum ratings apply to both DICE and packaged devices.
Rating applies to applications using heat sinking to control case temperature.
Rating applies to applications not using a heat sinking; devices in free air only.
Burn-in is available on commercial and industrial temperature range parts in
TO-can packages.
For devices processed in total compliance to MIL-STD-883, add /883 after part
number. Consult factory for 883 data sheet.
Case Temperature
Ambient Temperature
MAT02A . . . . . . . . . . . . . . . . . . . . . . . . . . –55 C to +125 C
MAT02E, F . . . . . . . . . . . . . . . . . . . . . . . . . –25 C to +85 C
NOTE
Substrate is connected to case on TO-78 package. Sub-
strate is normally connected to the most negative circuit
potential, but can be floated.
Dual Monolithic Transistor
2
V
(T
50 V
50 V
150 V
OS
E
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
C
= +25 C) Range
max
ORDERING GUIDE
) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
PIN CONNECTION
40 C
Low Noise, Matched
(H Suffix)
70 C
CBO
2
TO-78
EE
CEO
) . . . . . . . . . . . . . . . . . . . . . 40 V
) . . . . . . . . . . . . . . . . . . . . 40 V
. . . . . . . . . . . . . . . . . . . . . 1.8 W
CC
Temperature
–55 C to +125 C
–55 C to +125 C
–55 C to +125 C
3
) . . . . . . . . . . . . . . . . . . 40 V
) . . . . . . . . . . . . . . . . . . 40 V
. . . . . . . . . . . . . . . . 500 mW
1
1
MAT02
Fax: 617/326-8703
Package
Option
TO-78
TO-78
TO-78

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MAT02AH Summary of contents

Page 1

... Rating applies to applications using heat sinking to control case temperature. Derate linearly at 16.4 mW/ C for case temperature above Rating applies to applications not using a heat sinking; devices in free air only. Derate linearly at 6.3 mW/ C for ambient temperature above 70 C. Model MAT02AH MAT02EH MAT02FH NOTES 1 Burn-in is available on commercial and industrial temperature range parts in TO-can packages ...

Page 2

MAT02–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Current Gain h FE Current Gain Match h FE Offset Voltage V OS Offset Voltage Change vs Offset Voltage Change vs. Collector Current ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Offset Voltage Average Offset Voltage Drift TCV Input Offset Current Input Offset Current Drift TCI Input Bias ...

Page 4

MAT02 WAFER TEST LIMITS (@ 25 C for V Parameter Breakdown Voltage Offset Voltage Input Offset Current Input Bias Current Current Gain Current Gain Match Offset Voltage Change vs Offset Voltage Change vs. Collector Current Bulk Resistance Collector ...

Page 5

Figure 1. Current Gain vs. Collector Current Figure 4. Base-Emitter-On Voltage vs. Collector Current Figure 7. Saturation Voltage vs. Collector Current REV. C Figure 2. Current Gain vs. Temperature Figure 5. Small Signal Input Resistance vs. Collector Current Figure 8. ...

Page 6

MAT02 Figure 10. Noise Current Density vs. Frequency Figure 13. Collector-to-Collector Leakage vs. Temperature Figure 16. Collector-to-Collector Capacitance vs. Reverse Bias Voltage Figure 11. Total Noise vs. Collective Current Figure 14. Collector-to-Collector Capacitance vs. Collector-to Substrate Voltage Figure 17. Emitter-Base ...

Page 7

LOG CONFORMANCE TESTING The log conformance of the MAT02 is tested using the circuit shown above. The circuit employs a dual transdiode logarith- mic converter operating at a fixed ratio of collector currents that are swept over a 10:1 range. ...

Page 8

MAT02 With the oscilloscope ac coupled, the temperature dependent term becomes a dc offset and the trace represents the deviation from true log conformity. The bulk resistance can be calculated from the voltage deviation V and the change in collector ...

Page 9

Figure 20. Compensation of Bulk Resistance Error Extrinsic resistive terms and the early effect cause departure from the ideal logarithmic relationship. For small V these effects can be lumped together as a total effective bulk re- sistance r . The ...

Page 10

MAT02 Collector-current range is the key design decision. The inher- ently low r of the MAT02 allows the use of a relatively high BE collector current. For input scaling full-scale and us- ing reference, ...

Page 11

Substituting in the voltage relationships and simplifying leads to where – The factor ...

Page 12

MAT02 Transistors Q2 and Q3 form current source (0.65 V/ 330 ~ 2 mA). Each collector of Q1 operates at 1 mA. The OP32 inputs are 3 V below the positive supply voltage ( V). ...

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